Preparation and characterization of AlN/FeCoSiB magnetoelectric thin film composites
Source abstract
Abstract
Abstract The preparation process of AlN/FeCoSiB thin film composites has been studied in detail in this work. The results indicate that annealing is more effective to improve the intensity of AlN (002) peak compared with changing sputtering parameters. After annealing at 500 °C, the AlN film possesses the highest intensity of (002) peak, typical columnar microstructure and root-mean-square (rms) roughness of 5 nm. The coercivity ( H c ) of FeCoSiB film decreases significantly after annealing in magnetic field. After annealing at 350 °C, a minimum H c of 2.6 Oe is obtained in FeCoSiB film, contributing to the achievement of most pronounced magnetic field sensitivity. The magnetoelectric (ME) voltage coefficient α ME up to 101 V/cm Oe is obtained at DC bias magnetic field ( H dc ) of 10 Oe and at the frequency ( f ) of 1 kHz. Furthermore, the thin film composites display an AC magnetic field sensitivity of 1.6 nT/√Hz at 1 kHz.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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