Analysis of the microstructural evolution of silicon nitride irradiated with swift Xe ions
Source abstract
Abstract
Abstract The evolution of 220 MeV Xe ion induced radiation damage in polycrystalline Si3N4 is studied, within the fluence range 5 × 1011– 2 × 1014 cm−2, using transmission electron microscopy techniques. These irradiation conditions allow for the study of track morphology in both crystalline and in radiation-amorphized Si3N4. The average track size in the polycrystalline samples is 1.9 ± 0.4 nm and 3.1 ± 0.5 nm in the radiation-amorphized samples. The larger track sizes in the radiation-amorphized material is in agreement with predictions of the inelastic thermal spike model and the role of thermal conductivity in latent track formation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Nuclear materials and radiation effects
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
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