journal article·2018-10

Fabrication of N-doped 3C-SiC nanobelts with selected (11¯0) top surface and their enhanced transverse piezoresistance behaviours

Xiaoxiao Li, Yun Tian, Fengmei Gao, Lin Wang, Shanliang Chen, Weiyou Yang

Ceramics International· Volume 44· Issue 15
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Diamond and Carbon-based Materials Research · Graphene research and applications · Advanced ceramic materials synthesis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (63)

Show source-provided references
1. Surface micromachined pressure transducers10.1016/0924-4247(91)85021-F ↗
2. Design principles and considerations for the ‘ideal’ silicon piezoresistive pressure sensor: a focused review10.1007/s00542-014-2215-7 ↗
3. Micro/nano-mechanical sensors and actuators based on soi-mems technology
4. Materials issues in microellctromechanical systens (MEMS)10.1016/S1359-6454(99)00294-3 ↗
5. Characterization of n-type β-SiC as a piezoresistor10.1109/16.214734 ↗
6. Deformation and fracture of small silicon crystals10.1016/0001-6160(57)90164-5 ↗
7. Piezoresistivity in vapor‐deposited diamond films10.1063/1.106821 ↗
8. Giant piezoresistivity in polymer-derived amorphous SiAlCo ceramics10.1007/s10853-016-9866-y ↗
9. Piezoresistance of conductor filled insulator composites10.1002/1097-0126(200102)50:2<229::AID-PI612>3.0.CO;2-U ↗
10. Nanobeam mechanics elasticity, strength, and toughness of nanorods and nanotubes10.1126/science.277.5334.1971 ↗
11. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review10.1016/0038-1101(96)00045-7 ↗
12. Low-dimensional SiC nanostructures: fabrication, luminescence, and electrical properties10.1016/j.pmatsci.2006.02.001 ↗
13. Inorganic semiconductor nanostructures and their field-emission applications10.1039/B712874F ↗
14. Morphological evolution of one-dimensional SiC nanomaterials controlled by sol-gel carbothermal reduction10.1016/j.matchar.2011.11.018 ↗
15. Hierarchical 3C-SiC nanowires as stable photocatalyst for organic dye degradation under visible light irradiation10.1016/j.mseb.2013.09.016 ↗
16. Thermal conductivity of SiC microwires: effect of temperature and structural domain size uncovered by 0 K limit phonon scattering10.1016/j.ceramint.2018.03.161 ↗
17. Calculated elastic constants and deformation potentials of cubic SiC10.1103/PhysRevB.44.3685 ↗
18. Analysis of piezoresistance in n-type β-SiC for high-temperature mechanical sensors10.1063/1.1513652 ↗
19. Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC10.1063/1.1775052 ↗
20. Studies on SiC, DLC and TiO2 thin films as piezoresistive sensor materials for high temperature application10.1007/s00542-012-1435-y ↗
21. High temperature piezoresistance properties of 6H–SiC ceramics doped with trivalent elements10.1016/j.mseb.2006.08.050 ↗
22. Photoelectric detectors based on inorganic p-type semiconductor materials10.1002/adma.201706262 ↗
23. Piezoresistance behaviors of p-type 6H-SiC nanowires10.1039/c1cc14343c ↗
24. Piezoresistance behaviors of ultra-strained SiC nanowires10.1063/1.4769217 ↗
25. In situsem electromechanical characterization of nanowire using an electrostatic tensile device10.1088/0022-3727/46/30/305501 ↗
26. Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires10.1039/c3tc30655k ↗
27. A giant negative piezoresistance effect in 3C-SiC nanowires with B dopants10.1039/C6TC01882C ↗
28. Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films10.1039/C4TC01054J ↗
29. Piezoresistive effect of p-type single crystalline 3C-SiC thin film10.1109/LED.2014.2301673 ↗
30. Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC10.1063/1.4869151 ↗
31. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using joule heating10.1038/srep28499 ↗
32. Piezoresistive effect of p-type single crystalline 3C-SiC on (111) plane10.1039/C5RA28164D ↗
33. Bulk acoustic resonator based on piezoelectric ZnO belts10.1021/nl060351x ↗
34. Chemical synthesis, characterisation and gas sensing performance of copper oxide nanoribbons10.1039/b716745h ↗
35. Synthesis and field emission properties of silicon carbide nanobelts with a median ridge10.1039/c2ce25579k ↗
36. Large-scale synthesis, growth mechanism, and photoluminescence of 3C-SiC nanobelts10.1016/j.matlet.2013.07.092 ↗
37. One-dimensional inorganic semiconductor nanostructures: a new carrier for nanosensors10.1351/PAC-CON-09-11-40 ↗
38. Fabrication and photoluminescence of bicrystalline SiC nanobelts10.1088/0022-3727/40/12/023 ↗
39. Synthesis and characterization of crystalline silicon carbide nanoribbons10.1007/s11671-010-9635-9 ↗
40. High-resolution electron microscopy observations of stacking faults in β-SiC10.1111/j.1151-2916.1989.tb06014.x ↗
41. Growth of flexible n-doped SiC quasialigned nanoarrays and their field emission properties10.1039/c3tc30752b ↗
42. Highly flexible and robust N-doped SiC nanoneedle field emitters10.1038/am.2014.126 ↗
43. Coaxial nanocable: silicon carbide and silicon oxide sheathed with boron nitride and carbon10.1126/science.281.5379.973 ↗
44. Observation of landau levels at the InAs (110) surface by scanning tunneling spectroscopy10.1103/PhysRevB.55.R16013 ↗
45. Schottky barrier diodes on 3C-SiC10.1063/1.95502 ↗
46. Piezoresistance in Si3N4 nanobelts: toward highly sensitive and reliable pressure sensors10.1039/C4TC01810A ↗
47. Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics10.1038/natrevmats.2016.31 ↗
48. Current-voltage characteristics and parameter retrieval of semiconducting nanowires10.1063/1.2177362 ↗
49. Lithium-assisted synthesis and characterization of crystalline 3C-SiC nanobelts10.1021/jp0462153 ↗
50. Ferrocene-catalyzed growth of single-crystalline 6H-SiC nanoribbons10.1111/jace.13229 ↗
51. Carrier transport in graphite/Si3N4-nanobelt/PtIr schottky barrier diodes10.1063/1.4901821 ↗
52. Controllable fabrication and electromechanical characterization of single crystalline Sb-doped ZnO nanobelts10.1063/1.2926392 ↗
53. PtIr/ZnO nanowire/Pentacene hybrid back-to-back double diodes10.1063/1.2981519 ↗
54. The piezoresistive effect of SiC for mems sensors at high temperatures:a review10.1109/JMEMS.2015.2470132 ↗
55. Johnson · 1985
56. Giant piezoresistance effects in silicon nanowires and microwires10.1103/PhysRevLett.105.226802 ↗
57. Electrically controlled giant piezoresistance in silicon nanowires10.1021/nl9037856 ↗
58. First-principles simulation on piezoresistivity in Alpha and Beta silicon carbide nanosheets10.1143/JJAP.50.06GE05 ↗
59. Influence of crystal defects on the piezoresistive properties of 3C-SiC10.1063/1.1775043 ↗
60. Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements10.1109/16.285013 ↗
61. Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors10.1088/0960-1317/22/8/085034 ↗
62. The piezoresistive effect in top-down fabricated p-type 3C-SiC nanowires10.1109/LED.2016.2579020 ↗
63. Giant piezoresistance effect in silicon nanowires10.1038/nnano.2006.53 ↗