Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory
Source abstract
Abstract
Abstract The bipolar switching and electrical conduction properties in transparent vanadium oxide (VO) resistance random access memory device were investigated in this study. The as-deposited VO thin films were deposited onto transparent indium tin oxide (ITO) substrate for the possible application in the structure of system on panel (SOP) devices. The transmittance of as-deposited VO thin films within the UV–vis spectrum in the wavelength range of 300–1100 nm was obtained. In addition, the Al/VO/ITO device shows reliable bipolar switching behaviors. The on/off ratio and biopolar switching cycling of two stable states for resistance random access memory device were found. We suggested that the current–voltage characteristics were governed by the space charge limit conduction (SCLC) transport models mechanism in low and high voltage regions.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Piezoelectric Materials · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
1. Fabrication and characteristics of Ba(Zr0.1Ti0.9)O3 thin films on glass substrate10.1016/j.jpcs.2007.07.082 ↗
2. Fabrication of one-transistor–capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film10.1109/TUFFC.2007.457 ↗
3. Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in non-volatile memory devices10.1007/s00339-007-4277-1 ↗
4. Temperature and frequency dependence of the ferroelectric characteristics of BaTiO3 thin films for nonvolatile memory applications10.1007/s00339-007-4108-4 ↗
5. Influence of lithium and potassium doping on structure and electrical characteristics of Lix(KyNa1−y)–x(Nb0.9Ta0.06Sb0.04)O3 lead-free piezoelectric ceramics10.1143/JJAP.51.035801 ↗
6. The influence of lanthanum doping on the physical and electrical properties of BTV ferroelectric thin films10.1007/s00339-010-6070-9 ↗
7. Electric aging behavior of lead-free Li0.06(K0.48Na0.52)0.94(Nb0.86Ta0.08Sb0.06)O3 piezoelectric ceramics improved by pre-calcined method10.1016/j.ceramint.2011.04.114 ↗
8. Large memory window in the vanadium doped Bi4Ti3O12 thin films10.1007/s00339-009-5361-5 ↗
9. Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates10.1007/s00339-009-5523-5 ↗
10. Solution based fabrication and electrical properties of CaBi4Ti4O15 thin films10.1016/j.ceramint.2011.04.056 ↗