Tuning electrical properties of PZT film deposited by Pulsed Laser Deposition
Source abstract
Abstract
Abstract The variation of the chemical composition and properties of PZT films as a function of oxygen pressure and laser fluence during pulsed laser deposition is used to tune the electrical properties of the PZT thin films. It is found that the deposition using a 248 nm laser fluence of 1.7 J/cm 2 and an oxygen pressure of 400 mtorr results the PZT films very similar to that of target material. Changing the laser fluences or oxygen pressure, affects the lead content of the deposited film. In the range of oxygen pressure 50–200 mtorr, the Zr/Zr+Ti and Ti/Zr+Ti ratio varies with oxygen pressure while the Pb/Zr+Ti ratio is almost uniform. Using oxygen pressure as a control parameter to tune the chemical compound and electrical properties of the deposited PZT films, the remnant polarization of the PZT films is tuned in the range of 6.6–42.2 µC/cm 2 , the dielectric constant is controlled in the range of 29–130, and the piezoelectric constant d 33 is controlled in the range of 3.82–4.96 pm/V for a 40 nm thick PZT film.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Metal and Thin Film Mechanics · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. PZT-based piezoelectric MEMS technology10.1111/j.1551-2916.2012.05155.x ↗
2. Do · 2006
3. Electrical characteristics of ferroelectric PZT Thin films for DRAM applications10.1109/16.155876 ↗
4. Large electro-optic effect in single-crystal Pb ( Zr, Ti) O3 (001) measured by spectroscopic ellipsometry10.1063/1.3009655 ↗
5. Inspection of remanent polarization in the ferroelectric ceramic PZT 95/5 through pyroelectric effect10.1111/j.1551-2916.2007.01760.x ↗
6. Functional materials integrated on III–V semiconductors10.1016/j.mee.2015.04.050 ↗
7. K.G. Brooks, M. Kohli, D.V. Taylor, T. Maeder, I. Reaney, A. Kholkin, P. Muralt, N. Setter, Sol-gel deposition of PZT thin films on ceramic ZrO2 Substrates, in: Proceedings of the Tenth IEEE International Symposium on in Applications of Ferroelectrics, ISAF 96, vol. 2, no., pp. 611–614 vol. 2, 18–21, 1996.10.1109/ISAF.1996.598059 ↗
8. Leclerc · 1999
9. Ferroelectric PZT thin films by sol-gel deposition10.1023/A:1008690316261 ↗
10. Processing of sol-gel derived PZT coatings on non-planar substrates10.1088/0960-1317/6/3/001 ↗
11. Bathurst · 2012
12. Development of deposition and etching technologies for piezoelectric elements for ferroelectric MEMS
13. Properties of RF-sputtered PZT thin films with Ti/Pt electrodes10.1155/2014/574684 ↗
14. K. Yamakawa, O. Arisumi, K. Okuwada, K. Tsutsumi, T. Katata, Development of stable PZT sputtering process using ex-situ crystallization and PZT/Pt interface control technique, in: Proceedings of the Eleventh IEEE International Symposium on in Applications of Ferroelectrics, ISAF 98, 1998, pp. 159–162.10.1109/ISAF.1998.786660 ↗
15. The fabrication and characterization of PZT thin film acoustic devices for application in underwater robotic systems
16. Preparation of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory10.1063/1.1534380 ↗
17. low voltage ferroelectric memory Pb(Zr,Ti)O3 thin films at low temperatures for high-density ferroelectric memory applications10.1557/JMR.2001.0491 ↗
18. Preparation of ferroelectric PZT thin films by plasma enhanced chemical vapor deposition using metalorganic precursors10.1016/j.jiec.2007.07.005 ↗
19. Deposition of Pb(Zr,Ti)O, thin films by metal-organic chemical vapor deposition using P-diketonate precursors at low temperatures10.1111/j.1151-2916.1995.tb08804.x ↗
20. P. Verardi, F. Craciun, M. Dinescu, Characterization of PZT thin film transducers obtained by pulsed laser deposition, in: Proceedings of the 1997 IEEE Ultrasonics symposium – 569, 1997.10.1109/ULTSYM.1997.663086 ↗
21. R. Wang, H. Kokawa, R. Maeda, Epitaxial PZT Films Deposited by Pulsed Laser Deposition for MEMS Application, DTIP 2006, Stresa, Lago Maggiore, Italy, 2006.
22. Pulsed laser deposition and characterization of PZT thin films10.1016/S0169-4332(99)00415-8 ↗
23. AES and XPS study of PZT thin film deposition by the laser ablation technique10.1016/S0272-8842(98)00013-3 ↗
24. N. Shohata, S. Matsubara, Y. Miyasaka, M. Yonezawa, Epitaxial Growth of PbTiO3 on MgAl2O4/Si Substrates, ISAF, 201210, 1986.
25. Investigation of the Pb depletion in single and dual pulsed laser deposited epitaxial PZT thin films and their structural characterization
26. Mukherjee · 2010
27. Dependence of electrical properties of epitaxial Pb ( Zr, Ti) O3 thick films on crystal orientation and Zr/(Zr+Ti) ratio10.1063/1.2126156 ↗
28. Effect of Zr/Ti ratio on piezoelectric properties of Pb(Ni1/3Sb2/3) O3–Pb(ZrTi)O3 ceramics10.1016/j.ceramint.2011.06.006 ↗
29. Wang · 2007
30. Development of integrated heterostructures on silicon by MBE10.1016/S0022-0248(02)02200-5 ↗
31. Alexe · 2004
32. Effects of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films10.1063/1.372439 ↗
33. Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation10.15407/spqeo5.01.078 ↗