High temperature dielectrics based on Bi1/2Na1/2TiO3-BaTiO3-Sr0.53Ba0.47Nb2O6 ceramics with high dielectric permittivity and wide operational temperature range

Abstract Lead-free (1-x) (0.94Bi1/2Na1/2TiO3 −0.06BaTiO3)-xSr0.53Ba0.47Nb2O6 (BNBT-xSBN, x = 0–0.04) ceramics are fabricated through a conventional solid-state reaction method. The structure and dielectric properties are systematically investigated. The dielectric permittivity of BNBT-xSBN is suppressed by the doping of SBN. The temperature of the dielectric peak in the lower temperature range decreases with increasing SBN content. As the SBN doping content increases from 0.01 to 0.04, the temperature range with the stable dielectric permittivity (e ± 15%, 1 kHz), taking the e value at 150 °C as the base point, expands from 319 °C to 383 °C. In addition, at a composition of x = 0.01, the sample shows higher dielectric permittivity (3964 ± 15%, 1 kHz) in a wide temperature range (89–408 °C). These results indicate that the Bi1/2Na1/2TiO3-BaTiO3-xSr0.53Ba0.47Nb2O6 ceramic is a promising candidate for thermally stable electronic capacitors in high temperature environments.