Determination of crystallization threshold temperature for sol-gel spin coated Cu2ZnSnS4 thin films
Source abstract
Abstract
Abstract The effects of annealing temperature and time on sol-gel Cu2ZnSnS4 thin film spin coated on soda lime glass substrate were investigated in terms of crystallinity, morphology, composition, optical and electrical properties. The annealing process was achieved in a tube furnace under N2 gas flow and S vapor. The importance of this work is the detailed investigation of annealing temperature and its effect on the Cu2ZnSnS4 thin films that were prepared by the sol-gel spin coating method. The threshold temperature where the film begins to crystallize has been determined to be 465 °C. A temperature increase of 15 °C from 450 to 465 °C boosted the crystallite size and main peak intensities and optimized energy gap from 1.38 to 1.46 eV. In summary, the effect of the annealing temperature on the crystallinity of the films was studied in detail and the threshold temperature value which improved the crystallinity was determined.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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