journal article·2017-05

Structure and properties of Hf-O-N films prepared by high-rate reactive HiPIMS with smoothly controlled composition

A. Belosludtsev, J. Houška, J. Vlček, S. Haviar, R. Čerstvý, J. Rezek, M. Kettner

Ceramics International· Volume 43· Issue 7
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OpenAlex topics: Metal and Thin Film Mechanics · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices

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References (32)

Show source-provided references
1. Development of hafnium based high-k materials - A review10.1016/j.mser.2010.12.001 ↗
2. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates10.1016/j.surfrep.2013.01.002 ↗
3. Properties of atomic layer deposited HfO2 thin films10.1016/j.tsf.2009.04.033 ↗
4. Hafnia and hafnia-toughened ceramics10.1007/BF00541601 ↗
5. Thickness dependent wetting properties and surface free energy of HfO2 thin films10.1063/1.4953262 ↗
6. High-rate reactive high-power impulse magnetron sputtering of hard and optically transparent HfO2 films10.1016/j.surfcoat.2015.08.024 ↗
7. Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen10.1063/1.3184577 ↗
8. Influence of nitrogen-related defects on optical and electrical behaviour in HfO2−xNx deposited by high-power impulse magnetron sputtering10.1063/1.4931099 ↗
9. Ferroelectric phase stabilization of HfO2 by nitrogen doping10.7567/APEX.9.091501 ↗
10. Enhanced mechanical properties of HfO2 film by nitrogen doping10.1080/02670844.2015.1121342 ↗
11. On the phase formation of sputtered hafnium oxide and oxynitride films10.1063/1.3437646 ↗
12. The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode10.1109/TED.2003.821707 ↗
13. Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments10.1088/0022-3727/46/5/055103 ↗
14. Gale · 2003
15. Process stabilization and a significant enhancement of the deposition rate in reactive high-power impulse magnetron sputtering of ZrO2 and Ta2O5 films10.1016/j.surfcoat.2013.10.052 ↗
16. Benefits of the controlled reactive high-power impulse magnetron sputtering of stoichiometric ZrO2 films10.1016/j.vacuum.2014.12.004 ↗
17. Microstructure of hard and optically transparent HfO2 films prepared by high-power impulse magnetron sputtering with a pulsed oxygen flow control10.1016/j.tsf.2016.10.059 ↗
18. High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties10.1016/j.tsf.2014.07.033 ↗
19. Reactive sputtering of TiOxNy coatings by the reactive gas pulsing process. Part I: pattern and period of pulses10.1016/j.surfcoat.2007.03.002 ↗
20. Determination of growth-induced strain and thermo-elastic properties of coatings by curvature measurements10.1016/S0921-5093(01)01979-7 ↗
21. Effect of sputtering gas on structural, optical and hydrophobic properties of DC-sputtered hafnium oxide thin films10.1016/j.surfcoat.2013.05.046 ↗
22. Influence of Nitrogen Flow Rates on the Structure, Hardness, and Electrical Resistivity of HfN Coatings by DC Sputtering10.1007/s11665-014-1377-x ↗
23. Flexible hydrophobic ZrN nitride films10.1016/j.vacuum.2016.05.020 ↗
24. A parametric model for reactive high-power impulse magnetron sputtering of films10.1088/0022-3727/49/5/055202 ↗
25. JCPDS-ICDD, PDF-4+ Database, International Centre for Diffraction Data, Newton Square, PA, USA, 2015.
26. Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition10.1109/TED.2007.892012 ↗
27. J. Ran, Z. Yan, Vacuum Field emission characteristics of HfOxNy films prepared by sputtering, 〈http://www.paper.edu.cn/index.php/default/en_releasepaper/downPaper/200906-327〉 (accessed 14.11.16), 2009.
28. Effect of nitrogen on the electronic properties of hafnium oxynitrides10.1063/1.2177385 ↗
29. Hydrophobicity of thin films of compounds of low-electronegativity metals10.1111/jace.13165 ↗
30. Structural, optical and mechanical properties of coloured TiNxOy thin films10.1016/S0040-6090(03)01123-4 ↗
31. The effects of the H/E ratio of various Cr – N interlayers on the adhesion strength of CrZrN coatings on tungsten carbide substrates10.1016/j.surfcoat.2015.06.077 ↗
32. On the significance of the H/E ratio in wear control: a nanocomposite coating approach to optimised tribological behaviour10.1016/S0043-1648(00)00488-9 ↗