Dielectric and piezoelectric properties of cerium-doped (NaBi)0.49[ ]0.02Bi2Nb1.98Ta0.02O9-based piezoceramics
Source abstract
Abstract
Abstract The effect of Ce-substitution for A -site on the electrical properties of (NaBi) 0.49 [ ] 0.02 Bi 2 Nb 1.98 Ta 0.02 O 9 -based piezoceramics prepared by the conventional solid state sintering method was investigated. The dense microstructure with ~98% theoretical density was well developed in this material system, presenting a typical Aurivillius phase structure. The Curie temperature ( T C ) gradually decreases from 791 °C to 770 °C with increasing Ce 3+ content. Moreover, doping with Ce 3+ significantly increases the piezoelectric constant ( d 33 ) and decreases the coercive field. The (NaBi 0.92 Ce 0.08 ) 0.49 [ ] 0.02 Bi 2 Nb 1.98 Ta 0.02 O 9 ceramic exhibits optimum electrical properties (e.g., d 33 ~24 pC/N, k p ~8.4%, Q m ~3488), together with a relatively high T C (~776 °C). These results indicate that this ceramic is a promising candidate for high-temperature piezoelectric applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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