Effects of loading rate and temperature on domain switching and evolutions of reference remnant state variables during polarization reversal in a PZT wafer

Abstract A PZT wafer poled in thickness direction is subject to through-thickness electric field cyclic loads at four different loading rates and four different temperatures. Electric displacement in thickness direction and in-plane extensional strain are measured and plotted during a complete cycle of polarization reversal. Reference remnant polarization and reference remnant in-plane extensional strain are calculated from the measured data. Effects of electric field loading rate and temperature on domain switching process and evolutions of reference remnant state variables are discussed and explained using consecutive two step slow 90° domain switching processes and reduced coercive field at high temperatures.