Electrical properties of SiC ceramics sintered with 0.5wt% AlN–RE2O3 (RE=Y, Nd, Lu)
Source abstract
Abstract
Abstract Silicon carbide ceramics with 0.5 wt% AlN–RE 2 O 3 (RE=Y, Nd, Lu) additives were prepared by hot-pressing the powder mixtures at 2050 °C for 6 h under an applied pressure of 40 MPa in a nitrogen atmosphere. The effects of additive composition on the sinterability, microstructure, and electrical properties of hot-pressed liquid-phase sintered (LPS)-SiC ceramics were investigated. It was found that all specimens could be sintered to >95% of the theoretical density by adding 5 wt% in situ -synthesized nano-sized SiC and 0.5 wt% AlN–RE 2 O 3 additives. SiC ceramics sintered with AlN–Y 2 O 3 and AlN–Nd 2 O 3 showed low electrical resistivity on the order of 10 −2 Ω cm. This low electrical resistivity was attributed to the growth of nitrogen-doped SiC grains and the confinement of non-conducting RE-containing phases in the junction areas. The electrical resistivity of LPS-SiC ceramics sintered with AlN–RE 2 O 3 was dependent on the chemistry of the additive composition.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Aluminum Alloys Composites Properties · Advanced materials and composites
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References (36)
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