Effect of oxygen/argon gas ratio on the structure and optical properties of sputter-deposited nanocrystalline HfO2 thin films
Source abstract
Abstract
Abstract Nanocrystalline hafnium oxide (HfO 2 ) thin films have been produced under variable reactive oxygen (O 2 ) fractionation ( Г ) employing Hf metal for reactive sputter-deposition. The effect of Г on the HfO 2 compound formation, structure, morphology and optical properties has been evaluated. Without oxygen, the films of hexagonal phase of Hf metal were grown. Films grown at different O 2 pressure are nanocrystalline, monoclinic HfO 2 with ( 1 ¯ 11 ) texturing. The optical properties of HfO 2 films have been evaluated using spectroscopic ellipsometry (SE). The optical constants and their dispersion profiles indicate that the best optical-quality HfO 2 films are formed at O 2 ratio of ≥0.2. The index of refraction ( n ) profiles derived from SE measurements follow the Cauchy dispersion relation. The correlation between oxygen-fraction and optical properties in HfO 2 films is established.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
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