Comprehensive characterization of CIGS absorber layers grown by one-step sputtering process
Source abstract
Abstract
Abstract We have demonstrated that the use of a one-step sputtering process allowed for the fabrication of copper indium gallium diselenide (CIGS) thin films by RF magnetron sputtering without an additional selenization process. The CIGS thin films deposited at different substrate temperatures were synthesized on soda-lime glass (SLG) substrates using a single quaternary CIGS target. The film composition ratios of ([Cu]/[In]+[Ga]), ([Ga]/[In]+[Ga]), and ([Se]/[Cu]+[In]+[Ga]) were almost consistent with those of the sputtering target. X-ray diffraction (XRD) and Raman results showed that the crystallinity of the CIGS thin films was gradually improved as substrate temperatures increased. Transmission electron microscopy (TEM) showed that the films grown at 600 °C have a columnar structure with the grain size of ~100 nm. In addition, for the CIGS films grown at 600 °C, TEM-EDX analysis revealed that the synchronized fluctuation of the Cu and Se signals was observed in the direction of the film depth, while the In and Ga signals were constant. As a result, the CIGS solar cell made using the film showed a degraded cell efficiency of 2.5%, which might be have been caused by not only Cu-rich and Se-poor compositions but the locally unstable composition in the CIGS films fabricated by one-step sputtering.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. Characteristics of Cu (In, Ga) Se2 (CIGS) thin films deposited by a direct solution coating process10.1016/j.jallcom.2011.09.080 ↗
2. Development of high-efficiency CuInxGa1-xSe2 thin-film solar cells by selenization with elemental Se vapor in vacuum10.1143/JJAP.34.54 ↗
3. Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphere10.1063/1.114424 ↗
4. CIGS absorbers and processes10.1002/pip.969 ↗
5. Non‐vacuum methods for formation of Cu (In, Ga)(Se, S)2 thin film photovoltaic absorbers10.1002/pip.914 ↗
6. A High‐Efficiency Solution‐Deposited Thin‐Film Photovoltaic Device10.1002/adma.200800555 ↗
7. Development of CuInSe2 Nanocrystal and Nanoring Inks for Low-Cost Solar Cells10.1021/nl802042g ↗
8. Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques10.1016/j.solmat.2017.08.027 ↗
9. An investigation on performance enhancement for KF post deposition treated CIGS solar cells fabricated by sputtering CIGS quaternary targets10.1016/j.vacuum.2018.02.023 ↗
10. Fabrication of Cu (In, Ga) Se2 thin films by sputtering from a single quaternary chalcogenide target10.1002/pip.1001 ↗
11. CuIn1−xGaxSe2 thin film solar cells by two-selenizations process using Se vapor
12. Effect of selenization pressure on CuInSe2 thin films selenized using co-sputtered Cu-In precursors10.1016/S0927-0248(99)00157-9 ↗
13. Fabrication of Cu (In, Ga) Se2 thin films solar cell by selenization process with Se vapor10.1016/j.solener.2005.07.011 ↗
14. SEM analysis and selenization of Cu–In alloy films produced by co-sputtering of metals10.1016/j.solmat.2008.01.007 ↗
15. Growth of ZnO: Al films by RF sputtering at room temperature for solar cell applications10.1016/j.sse.2009.07.006 ↗
16. Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering10.1016/j.jallcom.2015.06.077 ↗
17. A promising sputtering for in situ fabrication of CIGS thin films without post-selenization10.1016/j.jallcom.2014.05.002 ↗
18. Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe2 thin films using one-step sputtering10.1166/mex.2017.1349 ↗
19. Bandgap engineering of Cu(In1-xGax)Se2 absorber layers fabricated using CuInSe2 and CuGaSe2 targets for one-step sputtering process10.1364/OME.6.003541 ↗
20. One-step synthesis of Cu (In, Ga) Se2 absorber layers by magnetron sputtering from a single quaternary target10.1016/j.tsf.2012.05.035 ↗
21. Comprehensive characterization of Cu-rich Cu (In, Ga) Se2 absorbers prepared by one-step sputtering process10.1016/j.tsf.2012.11.071 ↗
22. CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target10.1016/j.ceramint.2016.06.067 ↗
23. A study on composition, structure and optical properties of copper-poor CIGS thin film deposited by sequential sputtering of CuGa/In and In/(CuGa+ In) precursors10.1016/j.jcrysgro.2012.08.013 ↗
24. Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization10.1016/j.jallcom.2013.02.112 ↗
25. The optical and electrical properties of copper indium di-selenide thin films10.1016/S0925-3467(00)00006-9 ↗
26. The role of oxygen in CuInSe2 thin films and CdS/CuInSe2 devices10.1016/0379-6787(86)90105-5 ↗
27. New world record efficiency for Cu (In, Ga) Se2 thin‐film solar cells beyond 20%10.1002/pip.1078 ↗
28. Thermochemistry of the Cu2Se–In2Se3 system10.1016/j.jallcom.2014.03.129 ↗
29. Thermochemistry of the Ga-Se System10.1149/2.0011507jss ↗