journal article·2019-12

Degradation Mechanism of Vanadium Oxide Films When Grown on Y‐Stabilized ZrO2 Above 500 °C

Songhee Choi, Junhyeob Oh, Ji-Hyun Lee, Jae Hyuck Jang, Shinbuhm Lee

Advanced Engineering Materials· Volume 21· Issue 12
Publisher page

Abstract

Although vanadium oxide (VOx) phases are thermodynamically similar, Y‐stabilized ZrO2 (YSZ) substrates show selective growth as single‐crystalline films. However, in this study, we find that the films degrade with the formation of nanoislands when evaporating VOx onto YSZ at a substrate temperature >500 °C. The nanoislands are epitaxial, i.e., Y‐doped VO2(R) at an oxygen partial pressure < 30 mTorr, and YVO4 at > 50 mTorr. Energy‐dispersive X‐ray spectroscopy shows that the rapid diffusion of vanadium and yttrium plays a critical role in film degradation. The degradation mechanism revealed herein guides the fabrication of VOx films for energy and electronic device applications.
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Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Emerging Materials Science Daegu-Gyeongbuk Institute of Science and Technology Daegu 42988 Republic of Korea

Center for Research Equipment Korea Basic Science Institute Daejeon 34133 Republic of Korea

Funding

Defense Acquisition Program Administration · Agency for Defense Development · Korea Institute of Energy Technology Evaluation and Planning

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