Highly efficient inductively coupled plasma assisted chemical mechanical polishing of 4H-SiC wafers
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (72)
Show source-provided references
1. Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions10.1063/1.4873113 ↗
2. Review of silicon carbide power devices and their applications10.1109/TIE.2017.2652401 ↗
3. Performance evaluation of high-power SiC MOSFET modules in comparison to Si IGBT modules10.1109/TPEL.2018.2834345 ↗
4. A review of silicon carbide MOSFETs in electrified vehicles: application, challenges, and future development10.1049/pel2.12524 ↗
5. Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectives10.1109/TED.2023.3346369 ↗
6. Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide10.1063/1.5031185 ↗
7. Advances in silicon carbides and their MEMS pressure sensors for high temperature and pressure applications10.1021/acsami.5c03045 ↗
8. Controllable removal of silicon carbide at nano scale by ion-implantation assisted laser machining10.1016/j.cirp.2023.03.008 ↗
9. Toward efficient fabrication of microstructures on SiC with nanometric surface quality10.1016/j.cirp.2024.04.058 ↗
10. A review on precision polishing technology of single-crystal SiC
11. Advances and challenges in 4H silicon carbide: defects and impurities
12. Augmented CMP techniques for silicon carbide10.4028/www.scientific.net/MSF.527-529.1099 ↗
13. Polishing performance and material removal mechanism in the solid-phase Fenton reaction based polishing process of SiC wafer using diamond gel disc10.1016/j.jmatprotec.2024.118486 ↗
14. Effect of process parameters on oxidation-enhanced removal mechanisms of GaN in photoelectrochemical mechanical polishing10.1016/j.ijmecsci.2025.110583 ↗
15. Morphological characteristics and formation mechanism of latent scratches in chemical mechanical polishing10.1016/j.jmatprotec.2022.117689 ↗
16. Application of the fenton reaction in silicon carbide polishing and its oxidative active center10.1016/j.ceramint.2024.06.255 ↗
17. Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface10.1007/s10854-013-1519-1 ↗
18. XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)10.1016/j.apsusc.2014.08.011 ↗
19. Characteristics in SiC-CMP using MnO2 slurry with strong oxidant under different atmospheric conditions10.1557/opl.2013.903 ↗
20. Chemical–mechanical polishing of 4H silicon carbide wafers10.1002/admi.202202369 ↗
21. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials10.1016/j.cap.2012.02.016 ↗
22. Two-step chemical mechanical polishing of 4H-SiC (0001) wafer10.1149/2162-8777/ac12de ↗
23. Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC10.1007/s11664-001-0111-2 ↗
24. Electro-chemical mechanical polishing of silicon carbide10.1007/s11664-004-0207-6 ↗
25. Sustainable electrochemical mechanical polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte10.1016/j.apsusc.2024.160241 ↗
26. Novel abrasive-free planarization of 4H-SiC (0001) using catalyst10.1007/s11664-006-0218-6 ↗
27. Study on the effect of process parameters and removal behavior of single-crystal SiC polishing based on a photocatalytic fixed polishing plate10.1016/j.diamond.2025.111985 ↗
28. Ultraviolet-assisted polishing of 2 inch SiC substrate
29. UV-TiO2 photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer10.1080/10426914.2017.1364855 ↗
30. High-integrity finishing of 4H-SiC (0001) by plasma-assisted polishing10.4028/www.scientific.net/AMR.126-128.423 ↗
31. The polishing effect of SiC substrates in femtosecond laser irradiation assisted chemical mechanical polishing (CMP)10.1149/2.0041704jss ↗
32. Femtosecond laser modification of silicon carbide substrates and its influence on CMP process10.1016/j.ceramint.2021.01.188 ↗
33. Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing10.1016/j.ijmachtools.2019.103431 ↗
34. Slurryless electrochemical mechanical polishing of 4-inch 4H–SiC (0001) and (000–1) surfaces10.1016/j.precisioneng.2023.06.005 ↗
35. Effect of voltage on electrochemical mechanical polishing (ECMP) of 4H–SiC with fixed abrasives10.1016/j.jmrt.2025.05.026 ↗
36. Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO210.1016/j.jmatprotec.2021.117150 ↗
37. Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry10.1016/j.surfcoat.2014.03.044 ↗
38. Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP)10.1016/j.ceramint.2024.01.239 ↗
39. Nanosecond laser irradiation assisted chemical mechanical polishing (CMP) process for promoting material removal of single crystal 4H–SiC10.1016/j.ceramint.2024.06.277 ↗
40. Study on picosecond laser stealth dicing of 4H-SiC along [112‾0] and [11‾00] crystal orientations on Si-face and C-face10.1016/j.optlastec.2023.109300 ↗
41. Experimental investigation on crack evolution and separation strength in 4H-SiC slicing by sub-nanosecond laser10.1016/j.optlastec.2025.112826 ↗
42. Atomic and close-to-atomic scale polishing of Lu2O3 by plasma-assisted etching10.1016/j.ijmecsci.2023.108374 ↗
43. Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing10.1016/j.cirp.2013.03.028 ↗
44. Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface10.1016/j.cirp.2015.04.002 ↗
45. GaN and SiC based 500kHz resonant bidirectional DC/DC design for 800V OBCM application
46. Characterization of 4H-SiC (0001) surface processed by plasma-assisted polishing10.1007/s00170-012-4430-7 ↗
47. A general strategy for polishing SiC wafers to atomic smoothness with arbitrary facets10.1016/j.mssp.2022.106628 ↗
48. Oxidation mechanism of 4H-SiC in slurry-less ECMP with weak alkaline electrolyte10.1016/j.cirp.2024.04.037 ↗
49. Insight into the atomic-scale material removal of 4H-SiC electrochemical mechanical polishing (ECMP) using graphene oxide10.1016/j.triboint.2025.110803 ↗
50. Planarization of SiC and GaN wafers using polishing technique utilizing catalyst surface reaction10.1149/2.007308jss ↗
51. Catalytic mechanism of tribochemical mechanical polishing on (0001) C-face of single crystal 6H-SiC substrate10.1007/s00170-023-11494-y ↗
52. Fabrication of smooth surface on 4H-SiC substrate by ultraviolet assisted local polishing in hydrogen peroxide solution10.4028/www.scientific.net/KEM.523-524.24 ↗
53. Optimization of the plasma oxidation and abrasive polishing processes in plasma-assisted polishing for highly effective planarization of 4H-SiC10.1016/j.cirp.2014.03.043 ↗
54. Microwave plasma modification-assisted shear-thickening polishing of single-crystal silicon carbide10.1016/j.precisioneng.2025.02.010 ↗
55. Analysis and review of chemical reactions and transport processes in pulsed electrical discharge plasma formed directly in liquid water10.1007/s11090-012-9403-y ↗
56. Analysis of the production mechanism of H2O2 in water treated by helium DC plasma jets10.1088/1361-6463/aad0eb ↗
57. The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction10.1016/j.precisioneng.2017.12.011 ↗
58. Equilibrium between chemical and mechanical parameters for single-crystal SiC in Electro-Fenton chemical-mechanical polishing10.1016/j.diamond.2025.111979 ↗
59. Oxidation of silicon carbide by O2 and H2O: a ReaxFF reactive molecular dynamics study, Part I, part I10.1021/jp306391p ↗
60. Investigation of silicon carbide oxidation mechanism using ReaxFF molecular dynamics simulation10.2514/1.A34669 ↗
61. Fast parallel algorithms for short-range molecular dynamics10.1006/jcph.1995.1039 ↗
62. High temperature pure carbon nanoparticle formation: validation of AIREBO and ReaxFF reactive molecular dynamics10.1016/j.carbon.2020.08.009 ↗
63. High-temperature oxidation of SiC-based composite: rate constant calculation from ReaxFF MD simulations, part II10.1021/jp307680t ↗
64. Oxidation behavior of SiC in dissociated oxygen environments10.1016/j.actamat.2025.120745 ↗
65. Accurate measurement of thin film mechanical properties using nanoindentation10.1557/s43578-022-00541-1 ↗
66. Inductively coupled plasma: the role of water in axial excitation temperatures10.1016/0584-8547(86)80146-X ↗
67. Polishing mechanism of CMP 4H-SiC crystal substrate (0001) Si surface based on an alumina (Al2O3) abrasive10.3390/ma17030679 ↗
68. Dominant parameters and mechanisms influencing the electrochemical shear-thickening polishing of 4H-SiC
69. Material removal rate model for chemical–mechanical polishing of single-crystal SiC substrates using agglomerated diamond abrasive10.1016/j.precisioneng.2024.04.002 ↗
70. Atomic-scale insights into the abrasive concentration effects on 6H-SiC removal in CMP10.1016/j.triboint.2025.111277 ↗
71. Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001)10.1016/j.apsusc.2014.04.048 ↗
72. Synergistic effect of photocatalysis and fenton on improving the removal rate of 4H-SiC during CMP10.1149/2162-8777/abf16d ↗