Optical and structural insights into Ta2O5/n-Si heterojunctions: detailed characterization and material properties
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OpenAlex topics: Semiconductor materials and devices · Advanced ceramic materials synthesis · Semiconductor materials and interfaces
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References (72)
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1. Crystallization effects in oxygen annealed Ta2O5 thin films on Si10.1016/S0040-6090(00)01569-8 ↗
2. Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films10.1063/1.1290494 ↗
3. Annealing effects on the optical and electrochemical properties of tantalum pentoxide films10.1007/s40145-021-0465-2 ↗
4. Barrier inhomogeneities and electrical characteristics of Ni/Ti Bilayer Schottky contacts on 4H–SiC after high temperature treatments10.1002/pssa.200460475 ↗
5. Infrared optical properties of amorphous and nanocrystalline Ta2O5 thin films10.1063/1.4819325 ↗
6. Effect of oxygen vacancy on the band gap and nanosecond laser-induced damage threshold of Ta2O5 films10.1088/0256-307X/29/8/084207 ↗
7. Effects of annealing on residual stress in Ta2O5 films deposited by dual ion beam sputtering10.3390/coatings8040150 ↗
8. A MODEL BASED METHOD FOR COMPARING THE PROPERTIES OF SOME METAL-Ta2O5/SiO2-Si STRUCTURES, Prilozi-Makedonska akademija Na Naukite i umetnostite
9. Relationship between Ta oxidation State and its local atomic coordination symmetry in a wide range of oxygen nonstoichiometry extent of TaOx10.1021/acs.jpcc.8b12053 ↗
10. Role of bond strength on the lattice thermal expansion and oxide ion conductivity in Quaternary pyrochlore solid solutions10.1021/ic202383f ↗
11. Layered perovskite Sr2Ta2O7 for visible light photocatalysis: a first principles study
12. Photoinduced electron transfer from nitrogen-doped tantalum oxide to adsorbed ruthenium complex10.1021/jp205223k ↗
13. Electronic conductivity and stability of doped Titania (Ti1−XMXO2, M = Nb, Ru, and Ta)—A density functional theory-based comparison comparison10.1021/jp100826g ↗
14. Epitaxial tantalum‐doped Β‐Ga2O3 thin films grown on Mgo (001) substrate by pulsed laser deposition10.1002/pssr.202400023 ↗
15. Simultaneous doping and heterojunction of silver on Na2Ta2O6 nanoparticles for visible light driven photocatalysis: the relationship between tunable optical absorption, defect chemistry and photocatalytic activity10.1039/C5CE01125F ↗
16. Investigation of high-temperature phase transformation in one-dimensional Ta2O5 nanorods
17. Laser cladding synthesis of Ta2O5 coatings on a Ta substrate
18. Characterization of RuO2 Ta2 O 5 coated titanium electrode: microstructure, morphology, and electrochemical investigation
19. Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film10.1007/BF00356687 ↗
20. Atomic layer deposited Ta2O5: from process optimization to thin film characterization
21. Effects of gamma irradiation on phytochemically synthesized CuO nanoparticles using Mussaenda frondosa leaves and their X-ray crystallographic analysis
22. Size-strain distribution analysis from XRD peak profile of (Mg, Fe) co-doped SnO2 nanoparticles fabricated using chemical co-precipitation route10.1016/j.ceramint.2024.08.254 ↗
23. X-ray diffraction line profile analysis of KBr thin films10.1007/s00339-016-0293-3 ↗
24. Microstructures, mechanical and corrosion properties of the extruded AZ31-xCaO alloys
25. Tantalum oxide coatings as candidate environmental barriers10.1007/s11666-004-0049-z ↗
26. Kim · 2003
27. Residual stress and microstructural evolution in environmental barrier coatings of tantalum oxide alloyed with aluminum oxide and lanthanum oxide10.1111/j.1551-2916.2005.00830.x ↗
28. On intrinsic stacking faults in polycrystalline Ni3Al10.1002/pssa.2210850221 ↗
29. Stacking faults and stacking fault energy of hexagonal barium titanate10.1111/j.1551-2916.2006.01305.x ↗
30. A first principles investigation of stacking fault energies and bonding in wurtzite materials10.1088/0953-8984/11/26/308 ↗
31. Crystallization improvement of Ta 2O 5 thin films by the addition of water vapor10.1016/j.jcrysgro.2004.10.004 ↗
32. Room-temperature formation of tantalum oxide films by liquid phase deposition10.1016/j.tsf.2004.11.100 ↗
33. Photo-induced growth of low dielectric constant porous silica film at room temperature10.1557/PROC-612-D5.17.1 ↗
34. Ezhilvalavan · 1999
35. Thermally stable amorphous tantalum yttrium oxide with low IR absorption for magnetophotonic devices10.1038/s41598-017-14184-4 ↗
36. Solvent free synthesis of Ta2O5 nanoparticles and their photocatalytic properties10.1063/1.5019423 ↗
37. Improvement in structural and dielectric properties of sputtered Ta2O5 thin film by post-deposition annealing10.1007/s00339-024-07881-1 ↗
38. Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si10.1016/S0026-2714(98)00218-2 ↗
39. Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation10.1016/j.tsf.2008.07.039 ↗
40. The effect of annealing temperature on structural & optical properties of Nanocrystalline SnO2 thin films prepared by sol-gel technique
41. Interferometric determination of the physical properties of annealed isotactic polypropylene fibers
42. Preparation of orthorhombic WO3 thin films and their crystal quality-dependent dye photodegradation ability10.3390/coatings9020090 ↗
43. Refractive index of optical materials10.1007/978-3-319-93728-1_29 ↗
44. High-resolution and temperature-insensitive fiber optic refractive index sensor based on Fresnel reflection modulated by Fabry–Perot interference10.1109/JLT.2010.2065215 ↗
45. A comparative study on the influence of pure anatase and Degussa-P25 TiO2 nanomaterials on the structural and optical properties of dye sensitized solar cell (DSSC) photoanode10.1016/j.ijleo.2018.05.032 ↗
46. Nonlinear optical properties of Cs2AgIn1–xBixCl6 single crystals10.1021/acs.jpclett.4c00986 ↗
47. Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films10.1016/j.optmat.2011.11.027 ↗
48. Systematic characterization of the crystalline phase transformation, from amorphous to rutile through anatase, of TiO2 nanofibers synthesised by electrospun technique10.4028/p-044t3c ↗
49. High transparency characteristics of zinc oxide thin films annealed at different temperatures10.4028/www.scientific.net/AMR.667.367 ↗
50. Boukrouh
51. Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors10.1016/j.jallcom.2021.158718 ↗
52. Thermal phase separation of ZrSiO4 thin films and frequency dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors10.1088/1361-6641/aabb68 ↗
53. Effect of annealing times on the structural and optical properties of PbO thin films prepared by D.C sputtering10.24996/ijs.2023.64.6.18 ↗
54. Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering10.1016/j.jallcom.2012.02.122 ↗
55. Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique10.1016/j.mssp.2011.01.007 ↗
56. Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology10.1016/j.solidstatesciences.2012.09.010 ↗
57. Characterisation of oxidised erbium films deposited on Si (1 0 0) substrates10.1016/j.matchemphys.2006.01.005 ↗
58. Effects of varying annealing ambient towards performance of ternary GaxCeyOz passivation layers for metal-oxide-semiconductor capacitor10.1155/2024/2936714 ↗
59. International journal of scientific and technical advancements fabrication and characterization of Ge based Nano MOS capacitor
60. Performance improvement of silicon carbide gate oxide interface by pre-oxidation10.1016/j.apsusc.2025.162359 ↗
61. Atanassova
62. Charge conduction mechanisms of atomic-layer-deposited Er2O3 thin films10.1063/1.3159833 ↗
63. Investigation of the interface trap density and series resistance of a high-k HfO2-based MOS capacitor: before and after 50 MeV Li3+ ion irradiation10.1080/10420150.2010.487904 ↗
64. Evaluation of chemical bonding features and resistance switching behaviors of ultrathin Si oxide dielectric sandwiched between Pt electrodes10.1143/JJAP.51.06FF02 ↗
65. Multifunctional organic phototransistor-based nonvolatile memory achieved by UV/Ozone treatment of the Ta2O5 Gate dielectric10.1021/am501197d ↗
66. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates10.1021/acsami.7b00099 ↗
67. The effects of temperature and frequency on the electrical and dielectric properties of Al2O3 structure10.1007/s12633-025-03329-0 ↗
68. Fowler-Nordheim tunneling into thermally grown SiO210.1109/T-ED.1968.16430 ↗
69. Temperature dependence of the tunnel-emission conduction current in Metal-ZrO[sub 2]-Silicon capacitor structures10.1149/1.2129279 ↗
70. Temperature-dependent fowler-Nordheim Electron barrier height in SiO2/4H-SiC MOS capacitors10.1016/j.mssp.2017.11.024 ↗
71. Conduction mechanism of leakage current due to the traps in ZrO2thin film10.1088/0268-1242/24/11/115016 ↗
72. A Ru–Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors10.1088/1361-6528/aaddbc ↗