journal article·2025-08

High-quality BeO films fabricated using discrete feeding plasma-enhanced atomic layer deposition

Jonghyun Bae, Juyoung Chae, Yoonseo Jang, Dohwan Jung, Sangoh Han, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh

Ceramics International· Volume 51· Issue 19
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OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Photorefractive and Nonlinear Optics

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References (49)

Show source-provided references
1. CMOS scaling toward sub-10 nm regime
2. FinFET scaling to 10 nm gate length
3. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
4. Self-heating and reliability issues in FinFET and 3D ICs
5. Investigation of self-heating effects in vertically stacked GAA MOSFET with wrap-around contact10.1109/TED.2022.3140283 ↗
6. Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs10.1109/JEDS.2020.3038391 ↗
7. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications10.1016/S0167-9317(03)00291-0 ↗
8. Structural and dielectric properties of crystalline and amorphous ZrO210.1016/j.tsf.2004.11.232 ↗
9. Enhancement of thermal characteristics and on-current in GAA MOSFET by utilizing Al 2 O 3-based Dual-κ spacer structure10.1109/TED.2022.3223321 ↗
10. Design and comparative analysis of FD-SOI FinFET with dual-dielectric spacers for high speed switching applications10.1007/s12633-023-02767-y ↗
11. Thermal conductivity of BeO single crystals10.1063/1.1659844 ↗
12. Characterization of ALD beryllium oxide as a potential high-k gate dielectric for low-leakage AlGaN/GaN MOSHEMTs10.1007/s11664-013-2754-1 ↗
13. Electronic spectrum of crystalline beryllium oxide10.1016/0022-3697(69)90348-5 ↗
14. Dielectric constants of BeO, MgO, and CaO using the two-terminal method10.1007/BF00209695 ↗
15. Atomic engineering of metastable BeO6 octahedra in a rocksalt framework10.1016/j.apsusc.2019.144280 ↗
16. Atomic layer deposition: an overview10.1021/cr900056b ↗
17. A brief review of atomic layer deposition: from fundamentals to applications10.1016/j.mattod.2014.04.026 ↗
18. Atomic-layer deposition of crystalline BeO on SiC10.1016/j.apsusc.2018.09.239 ↗
19. Atomic-layer deposition of single-crystalline BeO epitaxially grown on GaN substrates10.1021/acsami.7b13487 ↗
20. Energy band offsets of BeO dielectrics grown via atomic-layer deposition on β-Ga2O3 substrates10.1016/j.jallcom.2022.166197 ↗
21. Growth and characterization of BeO thin films grown by atomic layer deposition using H2O and O3 as oxygen sources10.1021/acs.jpcc.7b05240 ↗
22. A study of highly crystalline novel beryllium oxide film using atomic layer deposition10.1016/j.jcrysgro.2011.08.040 ↗
23. Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition10.1016/j.apsusc.2021.151405 ↗
24. Polarization-Induced Two-Dimensional electron gas at BeO/ZnO interface10.1016/j.apsusc.2022.154103 ↗
25. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing10.1038/srep39717 ↗
26. From the bottom-up: toward area-selective atomic layer deposition with high selectivity10.1021/acs.chemmater.8b03454 ↗
27. AxBAxB… pulsed atomic layer deposition: numerical growth model and experiments10.1063/1.4942439 ↗
28. Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method10.1039/D2TC03485A ↗
29. Advanced atomic layer deposition: ultrathin and continuous metal thin film growth and work function control using the discrete feeding method10.1021/acs.nanolett.2c00811 ↗
30. Improved growth and electrical properties of atomic-layer-deposited metal-oxide film by discrete feeding method of metal precursor10.1021/cm100900k ↗
31. Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method10.1063/1.5085801 ↗
32. Enhancing electronic properties by suppressing nucleation delay for low-temperature processed atomic-layer-deposited amorphous zinc–tin-oxide thin films10.1016/j.ceramint.2024.01.427 ↗
33. Enhancing chemisorption efficiency and thin-film characteristics via a discrete feeding method in high-k dielectric atomic layer deposition for preventing interfacial layer formation10.1039/D3TC00704A ↗
34. Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition10.1016/j.sse.2019.107661 ↗
35. Sub-nanometer heating depth of atomic layer annealing10.1016/j.apsusc.2020.146615 ↗
36. Fabrication and properties of dense beryllium oxide10.1016/0022-3115(61)90125-8 ↗
37. Improved properties of the atomic layer deposited Ru electrode for dynamic random-access memory capacitor using discrete feeding method10.1021/acsami.1c03795 ↗
38. Domain epitaxy of crystalline BeO films on GaN and ZnO substrates10.1111/jace.16198 ↗
39. Comparative study of crystallite size using Williamson-Hall and Debye-Scherrer plots for ZnO nanoparticles10.1088/2043-6254/ab52f7 ↗
40. How to calculate crystallite size from x-ray diffraction (XRD) using Scherrer method10.17509/ajse.v2i1.37647 ↗
41. Controlled 2D growth approach via atomic layer deposition for improved stability and performance in flexible SnO thin-film transistors10.1039/D4TC01169D ↗
42. Thermal conductivity of yttria‐stabilized zirconia thin films grown by plasma‐enhanced atomic layer deposition10.1111/jace.19186 ↗
43. Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition10.1016/j.scriptamat.2018.05.049 ↗
44. XPS study of SiO thin films and SiO-metal interfaces10.1088/0953-8984/1/31/019 ↗
45. Study on interfacial interaction between Si and ZnO10.1016/j.ceramint.2019.07.200 ↗
46. The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors10.1016/j.tsf.2009.02.074 ↗
47. Boosted growth rate using discrete reactant feeding method and novel precursor of indium oxide by atomic layer deposition
48. Measurement of bandgap energies in low-k organosilicates10.1063/1.4867644 ↗
49. Border traps and bias-temperature instabilities in MOS devices10.1016/j.microrel.2017.11.007 ↗