Impact of atomic layer deposition supercycle design on the reliability of heterogenous IGZO channel TFTs
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OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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References (34)
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1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors10.1038/nature03090 ↗
2. Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications10.1002/jsid.155 ↗
3. Embedded DRAM using C-Axis-Aligned crystalline in-Ga-Zn oxide FET with 1.8V-Power-Supply voltage10.1149/09001.0139ecst ↗
4. Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel
5. Mobility–stability trade-off in oxide thin-film transistors10.1038/s41928-021-00671-0 ↗
6. Material characteristics and applications of transparent amorphous oxide semiconductors10.1038/asiamat.2010.5 ↗
7. Oxygen vacancies in ZnO10.1063/1.2053360 ↗
8. Native point defects in ZnO10.1103/PhysRevB.76.165202 ↗
9. High-performance metal-oxide thin-film transistors based on inkjet-printed self-confined bilayer heterojunction channels10.1039/C8TC06596A ↗
10. Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer10.1063/1.4952445 ↗
11. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition10.1063/1.4901732 ↗
12. Improvement of mobility and stability in oxide thin-film transistors using triple-stacked structure10.1109/LED.2015.2502990 ↗
13. High-performance coplanar dual-channel a-InGaZnO/a-InZnO semiconductor thin-film transistors with high field-effect mobility10.1002/aelm.202000896 ↗
14. Remarkable stability improvement with a high-performance PEALD-IZO/IGZO top-gate thin-film transistor via modulating dual-channel effects10.1002/admi.202200501 ↗
15. Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT
16. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook10.1088/2631-7990/acb46d ↗
17. Thermoelectric transport and Hall measurements of low defect Sb 2Te3 thin films grown by atomic layer deposition10.1088/0268-1242/28/3/035010 ↗
18. Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition
19. Comparative study on performance of IGZO transistors with sputtered and atomic layer deposited channel layer10.1109/TED.2019.2899586 ↗
20. Amorphous IGZO TFT with high mobility of 70 cm2/(V s) via vertical dimension control using PEALD10.1021/acsami.9b14310 ↗
21. Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack10.1021/acsami.0c22677 ↗
22. Optical properties of indium oxide10.1063/1.1707830 ↗
23. Electrical properties of single crystals of indium oxide10.1063/1.1702560 ↗
24. A study on the hot carrier effect in InGaZnO thin film transistors10.1002/sdtp.13152 ↗
25. Surrounding gate vertical-channel FET with a gate length of 40 nm using BEOL-compatible high-thermal-tolerance in-Al-Zn oxide channel10.1109/TED.2020.3021996 ↗
26. Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition10.1016/j.apsusc.2024.160242 ↗
27. Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review10.1021/acs.chemmater.8b02878 ↗
28. Sequential design of PEALD in–Ga–Zn–O active layer for enhancing TFT stability10.1109/TED.2023.3323444 ↗
29. Investigating the stability of zinc oxide thin film transistors10.1063/1.2425020 ↗
30. Analysis of nitrogen‐doping effect on sub‐gap density of states in a‐IGZO TFTs by TCAD simulation
31. Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays10.1557/jmr.2013.214 ↗
32. Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress10.1063/1.3272016 ↗
33. Mobility enhancement and abnormal humps in top-gate self-aligned double-layer amorphous InGaZnO TFTs10.1109/JEDS.2022.3163774 ↗
34. Origin of light instability in amorphous IGZO thin-film transistors and its suppression10.1038/s41598-021-94078-8 ↗