Effects of deposition temperature on microstructure and electrical resistivity of intrinsic CVD-SiC
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. Developments of plasma etching technology for fabricating semiconductor devices10.1143/JJAP.47.1435 ↗
2. A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications10.1016/j.tsf.2015.02.060 ↗
3. Enhanced erosion resistance in semiconductor reactive ion etcher focus ring with large grain PVT SiC10.1016/j.vacuum.2024.113062 ↗
4. Structural controlling of highly-oriented polycrystal 3C-SiC bulks via halide CVD10.3390/ma12030390 ↗
5. The corrosion behavior of various CVD SiC coatings in molten silicon10.1016/j.ceramint.2023.11.147 ↗
6. Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD10.1016/j.ceramint.2020.07.177 ↗
7. Three-dimensional simulation of an inductively coupled plasma reactor10.1063/1.1448673 ↗
8. 2D fluid model analysis for the effect of 3D gas flow on a capacitively coupled plasma deposition reactor10.1088/0963-0252/25/3/035006 ↗
9. Electrical properties of liquid-phase sintered silicon carbide ceramics: a review10.1080/10408436.2018.1532394 ↗
10. Conductive SiC ceramics fabricated by spark plasma sintering10.1016/j.ceramint.2016.07.126 ↗
11. Electrical properties of SiC ceramics sintered with 0.5 wt% AlN–RE2O3 (RE= Y, Nd, Lu)10.1016/j.ceramint.2013.12.157 ↗
12. Effects of elemental additives on electrical resistivity of silicon carbide ceramics10.1111/j.1151-2916.1987.tb04895.x ↗
13. Relationships between microstructure and electrical properties of liquid-phase sintered silicon carbide materials using impedance spectroscopy10.1016/j.jeurceramsoc.2006.05.053 ↗
14. Effect of grain growth on electrical properties of silicon carbide ceramics sintered with gadolinia and yttria10.1016/j.jeurceramsoc.2015.08.006 ↗
15. Electrodischarge‐machinable silicon carbide ceramics sintered with yttrium nitrate10.1111/j.1551-2916.2011.04419.x ↗
16. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition10.1063/1.94973 ↗
17. Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition10.1016/j.tsf.2007.06.072 ↗
18. Epitaxial growth and electric characteristics of cubic SiC on silicon10.1063/1.338355 ↗
19. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD10.1016/j.materresbull.2015.12.012 ↗
20. Synthesis of cubic nanocrystalline silicon carbide (3C-SiC) films by HW-CVD method10.1007/s12633-015-9358-8 ↗
21. Effects of SiC particle size on flexural strength, permeability, electrical resistivity, and thermal conductivity of macroporous SiC10.1016/j.ceramint.2021.09.244 ↗
22. Effect of Ni content and its particle size on electrical resistivity and flexural strength of porous SiC ceramic sintered at low-temperature using clay additive10.1016/j.ceramint.2021.08.032 ↗
23. Electrical resistivity at the micron scale in a polycrystalline SiC ceramic10.1016/j.ceramint.2021.06.123 ↗
24. Effects of dopants on electrical, thermal, and mechanical properties of porous SiC ceramics10.1016/j.jeurceramsoc.2021.01.049 ↗
25. Influence of Fe2O3 and sintering atmosphere on the phase evolution, and electrical resistivity of porous SiC10.1016/j.ceramint.2023.12.151 ↗
26. Effect of carbon content on electrical, thermal, and mechanical properties of porous SiC ceramics with B4C and C additives10.1016/j.jeurceramsoc.2022.04.004 ↗
27. Electrical resistivity and flexural strength of mullite‐bonded porous SiC: effect of transition metal additives10.1111/jace.19236 ↗
28. SiC-based ceramics with remarkable electrical conductivity prepared by ultrafast high-temperature sintering10.1016/j.jeurceramsoc.2022.12.025 ↗
29. Microstructural, electrical, and mechanical properties of conductive SiC ceramics fabricated by spark plasma sintering10.1111/ijac.14160 ↗
30. Graphene translucency and interfacial interactions in the Gold/Graphene/SiC system10.1021/acs.jpclett.8b01384 ↗
31. The effect of nitrogen doping and heat treatment on electrical resistivity of CVD SiC bulks10.1088/2053-1591/acfbdb ↗
32. The electrical properties of polycrystalline silicon films10.1063/1.321593 ↗
33. Grain boundary misorientations and percolative current paths in high‐J c powder‐in‐tube (Bi, Pb) 2Sr3Ca3Cu3O x10.1063/1.113468 ↗