Electrical switching and phase change properties of GeTe-Al2Te3 chalcogenide alloys
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (60)
Show source-provided references
1. Pseudobinary Al2Te3-Sb2Te3 material for high-speed phase change memory application10.1063/1.3680580 ↗
2. Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application10.1016/j.scriptamat.2011.04.033 ↗
3. Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material10.1063/1.4898074 ↗
4. Insight into the role of W in amorphous GeTe for phase-change memory10.1016/j.jallcom.2017.12.212 ↗
5. Impact of in doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process10.1063/1.4978020 ↗
6. High thermal stable and fast switching ni-ge-te alloy for phase change memory applications10.1063/1.4937603 ↗
7. Titanium-induced structure modification for thermal stability enhancement of a GeTeTi phase change material10.1039/C4RA11504J ↗
8. A phase-change memory model for neuromorphic computing10.1063/1.5042408 ↗
9. Investigation of Al doping on Ge55Te45 for phase change memory application10.1063/1.4811683 ↗
10. Improved thermal stability and direct hexagonal transition accompanied by metal-insulator transition in arsenic substituted Ge2Sb2Te510.1016/j.jallcom.2022.164897 ↗
11. Structural transformation and phase change properties of Se substituted GeTe10.1038/s41598-021-87206-x ↗
12. Direct hexagonal transition of amorphous (Ge2Sb2Te5)0.9Se0.1 thin films10.1063/1.4865198 ↗
13. Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys10.1038/srep08050 ↗
14. A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications10.1039/D2RA00771A ↗
15. Chemical ordering and fragility minimum in cu-as-se glasses10.1016/j.jnoncrysol.2006.03.076 ↗
16. Improved phase-change properties of sn–zn–sb alloys with a two-step crystallization process for multi-level data storage applications10.1016/j.ceramint.2019.05.175 ↗
17. Electrical switching in cu-as-se glasses10.1111/j.2041-1294.2011.00038.x ↗
18. Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film10.1016/j.ceramint.2023.09.112 ↗
19. Doping in metal chalcogenide glasses10.1134/1.1187476 ↗
20. The coordination environment of Ag and Cu in ternary chalcogenide glasses10.1016/S0022-3093(96)00225-6 ↗
21. Structure of cu-as-se glasses investigated by neutron diffraction with copper isotope substitution10.1103/PhysRevB.78.064207 ↗
22. Structural studies of glassy CuAsSe2 and Cu-As2Se3 alloys10.1103/PhysRevB.10.1528 ↗
23. The formal valence shell model for structure of amorphous semiconductors10.1016/0022-3093(89)90057-4 ↗
24. Local structure and electrical switching in chalcogenide glasses10.1103/PhysRevB.58.3022 ↗
25. 27 Al MAS NMR investigations on Al23Te77 glass: observation of 5- coordinated Al and its influence on electrical switching10.1016/j.ssc.2019.02.007 ↗
26. Local structure and electrical switching in Al20Te75X5 (X = Si, Ge, As, sb) glasses10.1007/s00339-020-03471-z ↗
27. Al coordination in bulk glasses from solid-state NMR10.1103/PhysRevB.57.33 ↗
28. Composition dependence of electrical properties of Al-Te glasses10.1016/S0022-3093(99)00315-4 ↗
29. Electrical switching in Sb doped Al23Te77 glasses10.1016/j.jpcs.2017.03.015 ↗
30. Electrical switching and aluminium speciation in al-as-te glasses10.1016/j.jnoncrysol.2016.09.004 ↗
31. Composition tuneable memory and threshold switching in Al20AsxTe80-x semiconducting glasses10.1557/JMR.1998.0408 ↗
32. A critical overview of thin films coating technologies for energy applications10.1080/23311916.2023.2179467 ↗
33. State-of-the-art electrochromic thin films devices, fabrication techniques and applications: a review10.1080/20550324.2023.2291619 ↗
34. Thin film deposition techniques: a comprehensive review10.53964/jmn.2024006 ↗
35. Chalcogenide glass: fabrication techniques, properties and applications10.1080/00150193.2017.1412187 ↗
36. Overview of thin film deposition techniques10.3934/matersci.2019.2.174 ↗
37. Awan · 2025 · 978
38. Characterization of Cu doping on GeTe for phase change memory application10.1063/1.4851757 ↗
39. Electrical resistivity of Cu doped As-Se glasses at high pressure10.1002/pssb.200301617 ↗
40. Electrical switching in germanium telluride glasses doped with Cu and Ag10.1007/s003390051025 ↗
41. Thermoelectric properties of Sn doped GeTe films10.1016/j.apsusc.2019.145025 ↗
42. Phase change properties of chalcogenide glasses - some interesting observations10.4028/www.scientific.net/KEM.702.37 ↗
43. Calorimetric studies of AlxTe100-x glasses: composition dependence of crystallization and a new compound in the Al-Te10.1016/S0022-3093(05)80814-2 ↗
44. Crystallization studies on glasses crystallization studies on CuxGe15Te85−x glasses10.1088/0953-8984/8/16/004 ↗
45. https://www.webelements.com/germanium/index.html.
46. Improved thermal and electrical properties of Al-doped Ge2Sb2Te5 films for phase-change random access memory10.1088/0022-3727/45/37/375302 ↗
47. Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses10.1063/1.2737137 ↗
48. Data retention characterization of phase-change memory arrays
49. A physics-based crystallization model for retention in phase-change memories
50. Optical properties and electronic structure of amorphous germanium10.1002/pssb.19660150224 ↗
51. Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors. Phil
52. Optical properties of new chalcogenide glasses from the GeSe2-Sb2Se3-PbSe system10.1016/j.matlet.2007.11.029 ↗
53. High thermal energy storage of the two-dimensional Al2Te3 semiconductor: DFT study of stability, electronic, phonon, thermal, and optical properties based on GGA and HSE0610.1016/j.physleta.2024.130052 ↗
54. Material engineering for PCM device optimization
55. Physics of switching and memory effects in chalcogenide glassy semiconductors10.1134/S1063782612050065 ↗
56. Phase change materials and their application to nonvolatile memories10.1021/cr900040x ↗
57. Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses10.1103/PhysRevB.78.035308 ↗
58. Reversible thermal breakdown as a switching mechanism in chalcogenide glasses10.1109/T-ED.1973.17618 ↗
59. Study on the thermal stability improvement of GeTe by Al doping10.1063/1.4819839 ↗
60. Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing10.1002/aelm.202000309 ↗