Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures
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OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Advanced Memory and Neural Computing
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References (100+)
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1. CMOS scaling Trends and beyond10.1109/MM.2017.4241347 ↗
2. Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS10.1016/S0167-9317(99)00330-5 ↗
3. Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2 gate dielectric stacks10.1088/0268-1242/16/6/302 ↗
4. High-K materials and metal gates for CMOS applications10.1016/j.mser.2014.11.001 ↗
5. Effects of post-deposition annealing of cerium oxide passivation layer in nitrogen-oxygen-nitrogen ambient10.1002/er.8184 ↗
6. CMOS integration of epitaxial Gd2O3 high-k gate dielectrics10.1016/j.sse.2006.04.018 ↗
7. Current conduction and dielectric behavior of high k-Y2O3 films integrated with Si using chemical vapor deposition as a gate dielectric for metal-oxide-semiconductor devices10.1007/s10832-004-5087-x ↗
8. Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates10.1016/j.surfrep.2013.01.002 ↗
9. Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics10.1016/j.apsusc.2016.02.176 ↗
10. Electrical properties of Al2O3 gate dielectrics,”10.1016/S0167-9317(02)01007-9 ↗
11. High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si (100) without Si interfacial layer10.1007/s00339-002-2069-1 ↗
12. Leakage current mechanisms of ultrathin high- k Er2O3 gate dielectric film10.1088/1674-4926/30/10/103003 ↗
13. Structural and electrical properties of thin Ho2O3 gate dielectrics10.1016/j.tsf.2010.09.002 ↗
14. Material, electrical, and optical characterizations of high-K Sm2TiO5 dielectric deposited on polycrystalline silicon10.1080/00150193.2012.732460 ↗
15. Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation10.1016/j.jallcom.2014.05.074 ↗
16. Surface-modified high-k oxide gate dielectrics for low-voltage high-performance pentacene thin-film transistors10.1002/adfm.200600747 ↗
17. Comparative studies of metal‐organic decomposed GaxCeyOz and CeO2 based functional MOS capacitor10.1002/er.6952 ↗
18. Mild synthesis of size-tunable CeO2 Octahedra for band gap variation10.1021/acs.chemmater.0c00318 ↗
19. Characterization and optical properties of pole-like nano-CeO2 synthesized by a facile hydrothermal method10.1016/j.apsusc.2013.09.067 ↗
20. Electrical analyses of charge trapping and stress-induced leakage current in CeO2 gate dielectric
21. Current conduction mechanisms in CeO2 thin films10.1149/1.2897755 ↗
22. Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)10.1007/s10008-013-2200-6 ↗
23. C-reactive protein detection based on ISFET structure with gate dielectric SiO2-CeO210.1016/j.mee.2019.110993 ↗
24. Modeling of improved efficiency and spectral response of a Si-based heterojunction solar cell by using CeO2 as a buffer layer10.1007/s10825-022-01912-x ↗
25. Electronic conductivity and dielectric properties of nanocrystalline CeO2 films10.1007/s10832-004-5088-9 ↗
26. Electrical characterization of CeO2/Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric
27. Oxygen vacancy formation and migration in ceria10.1016/j.ssi.2006.07.045 ↗
28. Microstructure, optical and dielectric properties of cerium oxide thin films prepared by pulsed laser deposition10.1007/s10854-019-02031-3 ↗
29. Engineering surface oxygen vacancy of mesoporous CeO2 nanosheets assembled microspheres for boosting solar-driven photocatalytic performance10.1016/j.cclet.2021.06.035 ↗
30. Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric10.1143/JJAP.48.05DA02 ↗
31. Doping-induced modulation of electronic, optical and wetting properties of CeO210.1016/j.jpcs.2022.110820 ↗
32. Epitaxial growth of HfO2 doped CeO2 thin films on Si(001) substrates for high-κ application,”
33. Physical and electrical properties of bilayer CeO2/TiO2 gate dielectric stack10.1016/j.mseb.2016.05.006 ↗
34. Influence of heavy Hf doping in CeO2: prediction on various physical properties10.1016/j.rinp.2022.105569 ↗
35. A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications10.1016/S0167-9317(00)00525-6 ↗
36. Computational testing of trivalent dopants in CeO2 for improved high-κ dielectric behaviour10.1039/C2TC00385F ↗
37. Defect cluster formation in M2O3-doped CeO210.1016/S0167-2738(98)00359-2 ↗
38. Electronic and geometric factors affecting oxygen vacancy formation on CeO2(111) surfaces: a first-principles study from trivalent metal doping cases10.1016/j.apsusc.2019.143732 ↗
39. Controllable dynamics of oxygen vacancies through extrinsic doping for superior catalytic activities10.1039/C8NR03801E ↗
40. Ionic conductivity of CeO2 with trivalent dopants of different ionic radii10.1016/0167-2738(81)90313-1 ↗
41. Redox properties of water on the oxidized and reduced surfaces of CeO2,”10.1016/S0039-6028(02)02657-2 ↗
42. A correlation between the ionic conductivities and the formation enthalpies of trivalent-doped ceria at relatively low temperatures10.1039/b821982f ↗
43. Alexandrov · 2010 · vol. 82
44. Theoretical study of CeO2 doped with tetravalent ions10.1103/PhysRevB.76.174119 ↗
45. Enhancing the oxygen vacancy formation and migration in bulk chromium(III) oxide by alkali metal doping: a change from isotropic to anisotropic oxygen diffusion10.1039/C7TA00315C ↗
46. Enhanced electrical performance and low frequency noise of In2O3 thin-film transistors using Al2O3/CeGdOx bilayer gate dielectrics10.1109/TED.2022.3164632 ↗
47. Structural, morphological, electrical and dielectric properties of Mn doped CeO210.1016/j.jallcom.2016.02.153 ↗
48. Structure and reducibility of CeO2 doped with trivalent cations10.1021/acs.jpcc.6b08118 ↗
49. Charge compensation and Ce 3+ formation in trivalent doping of the CeO2 (110) surface: the key role of dopant ionic radius10.1021/jp112112u ↗
50. Selective enhancement of green upconversion luminescence from NaYF4:Yb, Er microparticles through Ga3+ doping for sensitive temperature sensing10.1016/j.jlumin.2019.116632 ↗
51. An Overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application10.1186/s11671-018-2712-1 ↗
52. Ga2O3 films for electronic and optoelectronic applications10.1063/1.359055 ↗
53. Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks10.1016/j.jmst.2017.04.021 ↗
54. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation10.1039/C4TC00572D ↗
55. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al2O3 passivation layer10.1021/am506351u ↗
56. Improved electrical properties of solution processed ZrO2 gate dielectric for large-area flexible electronics10.7567/JJAP.52.100206 ↗
57. Effects of N2 and O2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte–insulator–semiconductor structures10.1016/j.snb.2013.12.103 ↗
58. Dielectric property and thermal stability of HfO2 on silicon10.1063/1.1506207 ↗
59. Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing10.1016/j.microrel.2010.01.045 ↗
60. Control of interface traps in HfO2 gate dielectric on silicon10.1007/s11664-010-1323-0 ↗
61. Reduction of charge trappings and electron tunneling in SIMOX by supplemental implantation of oxygen,”10.1109/23.273484 ↗
62. The electrical property of CeO2 films deposited by MOCVD on Si(100)10.1149/1.2733802 ↗
63. Oxygen concentration and its effect on the leakage current in BiFeO3 thin films
64. Crystallization effects in oxygen annealed Ta2O5 thin films on Si10.1016/S0040-6090(00)01569-8 ↗
65. A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications10.1016/S0167-9317(00)00525-6 ↗
66. The effect of interfacial layer properties on the performance of Hf-based gate stack devices10.1063/1.2362905 ↗
67. Hydrogen passivation of oxygen vacancies in LaAlO310.1016/j.cap.2022.04.019 ↗
68. Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors10.1016/j.apsusc.2020.145837 ↗
69. Effect of forming gas high-pressure annealing on metal-ferroelectric-semiconductor Hafnia Ferroelectric tunnel junction10.1109/LED.2020.3001639 ↗
70. The role of nitrogen-related defects in high-k dielectric oxides: density-functional studies10.1063/1.1854210 ↗
71. Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures,”10.1016/j.microrel.2015.11.022 ↗
72. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors10.1016/j.mee.2006.01.271 ↗
73. High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics10.1063/1.4802779 ↗
74. Effect of high temperature forming gas annealing on electrical properties of 4H-SiC lateral MOSFETs with lanthanum silicate and ALD SiO2 gate dielectric
75. Detailed study on the role of oxygen vacancies in structural, magnetic and transport behavior of magnetic insulator: Co-CeO210.1088/0953-8984/21/48/486004 ↗
76. Low temperature processed hafnium oxide: structural and electrical properties,”10.1016/j.mssp.2006.10.031 ↗
77. Remote coulomb scattering limited mobility in MOSFET with CeO2/La2O3 gate stacks
78. Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors10.1016/j.sse.2011.04.009 ↗
79. Interface modulation and optimization of electrical properties of HfGdO/GaAs gate stacks by ALD-derived Al2O3 passivation layer and forming gas annealing10.1002/aelm.201700543 ↗
80. Effects of varying annealing ambient towards performance of ternary GaxCeyOz passivation layers for silicon-based metal-oxide-semiconductor capacitor
81. Growth of Quaternary GaxCe1-xOyNz passivation layer for silicon based metal-oxide-semiconductor capacitor10.1016/j.matchemphys.2022.126549 ↗
82. Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient10.1016/j.ceramint.2023.01.072 ↗
83. An investigation of the insertion of the cations H+, Na+, K+ on the electrochromic properties of the thermally evaporated WO3 thin films grown at different substrate temperatures10.1016/j.matchemphys.2010.08.021 ↗
84. Effects of nitrogen content in monocrystalline nano-CeO2 on the degradation of dye in indoor lighting10.1016/j.apsusc.2013.05.044 ↗
85. Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
86. Approaching defect-free amorphous silicon nitride by plasma-assisted atomic beam deposition for high performance gate dielectric10.1038/srep28326 ↗
87. Synergetic effects of monoethanolamine (MEA) and post-deposition calcination on biosynthesized CeO2 nanostructures spin-coated on silicon substrate10.1016/j.matchemphys.2021.125656 ↗
88. Visible light removal of reactive dyes using CeO2 synthesized by precipitation10.1016/j.jece.2018.06.046 ↗
89. Synthesis and optical properties of CeO2 nanocrystalline films grown by pulsed electron beam deposition10.1007/s10853-008-2750-7 ↗
90. Low temperature thin films for next-generation microelectronics10.1016/j.surfcoat.2017.11.013 ↗
91. Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient10.1016/j.tsf.2010.07.030 ↗
92. Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks10.1016/j.tsf.2019.02.034 ↗
93. X-ray photoelectron spectroscopic (ESCA) study of bonding in pentacoordinate silicon compounds10.1021/ic50172a037 ↗
94. Connection between Si-N and Si-H vibrational properties in amorphous SiNx: H films10.1080/13642818908220184 ↗
95. Metal-organic decomposed cerium oxide thin film in mixed ambient at different temperatures for MOS capacitor10.1007/978-981-19-5315-6 ↗
96. Defect generation by hydrogen at the Si- SiO2 interface10.1103/PhysRevLett.87.165506 ↗
97. Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate10.1007/s10854-016-6115-8 ↗
98. Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide,”10.1109/LED.2006.873423 ↗
99. Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: before and after 50MeV Li3+ ions irradiation,”10.1016/j.nimb.2011.08.025 ↗
100. Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements10.1007/s10854-020-03370-2 ↗