Electrical and optical properties of (In1-xSnx)2O3(1+δ) films (0.03 ≤ x ≤ 0.40, δ ≈ 0.28) grown on Si substrates using co-sputtering of In2O3 and SnO2
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (67)
Show source-provided references
1. Crystallization and electrical properties of ITO:Ce thin films for flat panel display applications10.1016/j.tsf.2009.01.182 ↗
2. Effect of UV exposure of ITO/PEDOT:PSS substrates on the performance of inverted-type perovskite solar cells10.1007/s10854-020-03336-4 ↗
3. Optimized ITO/Ag/ITO multilayers as a current spreading layer to enhance the light output of ultraviolet light-emitting diodes10.1016/j.jallcom.2018.10.368 ↗
4. Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes10.1364/OE.389725 ↗
5. Transparent and conducting ITO films: new developments and applications10.1016/S0040-6090(02)00163-3 ↗
6. Transparent conductive oxides and their applications in near infrared plasmonics
7. Evaporated Sn‐doped In2O3 films: basic optical properties and applications to energy‐efficient windows10.1063/1.337534 ↗
8. Optical measurements and mapping in Ga- and Al-doped ZnO and Sn-doped In2O310.1002/pssa.201532020 ↗
9. Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics10.1364/OME.8.001231 ↗
10. Effect of oxygen stoichiometry on the structure, optical and epsilon-near-zero properties of indium tin oxide films10.1364/OE.27.028618 ↗
11. Effects of free carriers on the optical properties of high mobility transition metal doped In2O3 transparent conductors
12. Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O310.1039/C9MH01014A ↗
13. Limitations of In2O3 as a transparent conducting oxide10.1063/1.5109569 ↗
14. Structural studies of tin-doped indium oxide (ITO) and In4Sn3O1210.1006/jssc.1997.7613 ↗
15. Electrical and optical properties of reactively evaporated indium tin oxide (ITO) films-dependence on substrate temperature and tin concentration10.1088/0022-3727/22/1/030 ↗
16. Effects of tin on IR reflectivity, thermal emissivity, Hall mobility and plasma wavelength of sol–gel indium tin oxide films on glass10.1016/S0167-577X(02)01220-X ↗
17. Solution synthesis of thin films in the SnO2−In2O3 system: a case study of the mixing of sol−gel and metal–organic solution processes10.1021/cm0522477 ↗
18. Structural and optical properties of indium tin oxide (ITO) thin films with different compositions prepared by electron beam evaporation10.1016/j.vacuum.2009.11.017 ↗
19. Structural, optical and electrical transport properties of Sn doped In2O310.1016/j.solidstatesciences.2020.106436 ↗
20. Joint Committee on Powder Diffraction Standards, No. 06–0416.
21. Joint Committee on Powder Diffraction Standards, No. 39–1058.
22. CO sensing properties of chemiresistive In2O3/SnO2 composite nanoparticle sensors10.1166/jnn.2020.17577 ↗
23. Warren · 1990 · 251
24. 211)-Orientation preference of transparent conducting In2O3:Sn films and its formation mechanism10.1021/am2012432 ↗
25. Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory10.1039/c0jm01816c ↗
26. Preparation of indium tin oxide (ITO) thin film with (400) preferred orientation by sol–gel spin coating method10.1007/s10854-019-01126-1 ↗
27. X‐ray photoemission spectroscopy studies of Sn‐doped indium‐oxide films10.1063/1.324149 ↗
28. Structural, optical and XPS study of thermal evaporated In2O3 thin films10.1088/2053-1591/aa7f59 ↗
29. XPS and AFM studies of surface chemistry and morphology of In2O3 ultrathin films deposited by rheotaxial growth and vacuum oxidation10.1016/j.tsf.2011.04.184 ↗
30. Characterization of tin oxides by x-ray-photoemission spectroscopy10.1103/PhysRevB.46.2460 ↗
31. XPS study of the L-CVD deposited SnO2 thin films exposed to oxygen and hydrogen10.1016/S0040-6090(01)00982-8 ↗
32. Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment10.1063/1.1633351 ↗
33. Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy10.1103/PhysRevB.81.165207 ↗
34. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process10.1016/j.apsusc.2017.02.007 ↗
35. Experimental and theoretical studies of indium oxide gas sensors fabricated by spray pyrolysis10.1016/j.snb.2004.07.026 ↗
36. Optical properties of amorphous and crystalline Sb-doped SnO2 thin films studied with spectroscopic ellipsometry: optical gap energy and effective mass10.1063/1.4929487 ↗
37. Crystallographic characteristics and p-type to n-type transition in epitaxial NiO thin film10.1021/cg401408f ↗
38. In situ electrochromic efficiency of a nickel oxide thin film: origin of electrochemical process and electrochromic degradation10.1039/C7TC04696K ↗
39. Effect of oxygen concentration in the sputtering ambient on the microstructure, electrical and optical properties of radio-frequency magnetron-sputtered indium tin oxide films10.1088/0268-1242/11/2/009 ↗
40. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
41. Correlation of oxygen vacancy variations to band gap changes in epitaxial ZnO thin films10.1063/1.4804613 ↗
42. Characterization of rutile SnO2 epitaxial films grown on MgF2 (001) substrates by MOCVD10.1002/crat.201700168 ↗
43. Structure effect on electrical properties of ITO films prepared by RF reactive magnetron sputtering10.1016/S0040-6090(96)08892-X ↗
44. High quality ITO thin films grown by dc and RF sputtering without oxygen10.1088/0022-3727/43/5/055402 ↗
45. Effects of tin on IR reflectivity, thermal emissivity, Hall mobility and plasma wavelength of sol–gel indium tin oxide films on glass10.1016/S0167-577X(02)01220-X ↗
46. Fujiwara · 2003
47. Effects of carrier concentration on the dielectric function of ZnO:Ga and In2O3:Sn studied by spectroscopic ellipsometry: analysis of free-carrier and band-edge absorption10.1103/PhysRevB.71.075109 ↗
48. Dresselhaus · 2018
49. Kittel · 2005
50. Optical properties of r.f. reactive sputtered tin-doped In2O3 films10.1016/0040-6090(79)90298-0 ↗
51. Carrier density dependence of optical band gap and work function in Sn-doped In2O3 films
52. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O310.1103/PhysRevB.79.205211 ↗
53. Optical band-edge absorption of oxide compound SnO210.1016/j.apsusc.2005.12.040 ↗
54. Origins of band-gap renormalization in degenerately doped semiconductors10.1103/PhysRevB.78.075211 ↗
55. Nature of the band Gap of In2O3 revealed by first-principles calculations and X-ray spectroscopy10.1103/PhysRevLett.100.167402 ↗
56. Fundamental limits on optical transparency of transparent conducting oxides: free-carrier absorption in SnO210.1063/1.3671162 ↗
57. Tin dioxide from first principles: quasiparticle electronic states and optical properties10.1103/PhysRevB.83.035116 ↗
58. High-temperature optical properties of indium tin oxide thin-films
59. On the nature and temperature dependence of the fundamental band gap of In2O310.1002/pssa.201330184 ↗
60. Many-electron effects on the dielectric function of cubic In2O3: effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift10.1103/PhysRevB.93.045203 ↗
61. Study of the functional properties of ITO grown by metalorganic chemical vapor deposition from different indium and tin precursors10.1016/j.jallcom.2014.03.088 ↗
62. Doping mechanisms of Sn in In2O3 powder studied using 119Sn Mössbauer spectroscopy and X-ray diffraction10.1143/JJAP.38.2856 ↗
63. Defect cluster aggregation and nonreducibility in tin-doped indium oxide10.1111/j.1151-2916.2003.tb03544.x ↗
64. Electrical properties and defect model of tin-doped indium oxide layers10.1007/BF00619080 ↗
65. Electrical, optical, and structural properties of indium-tin-oxide thin films for granic light-emitting devices10.1063/1.371708 ↗
66. Grain-size effect on the electrical properties of nanocrystalline indiumtin oxide thin films10.1016/j.mseb.2015.04.011 ↗
67. Effect of tin doping on the properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering10.1016/j.mseb.2007.01.025 ↗