Application of ZnO/CeO2 novel abrasive to quartz glass in photochemical mechanical polishing (PCMP)
Source abstract
Abstract
This experiment used a two-step method to synthesize ZnO/CeO 2 nanoparticle abrasives and applied to photochemical mechanical polishing (PCMP). Morphological, structural, and optical characterizations were carried out to investigate the removal mechanism of ZnO/CeO 2 abrasives during PCMP. The notable enhancement in Ce 3+ and oxygen vacancy of CeO 2 after the loading modification of ZnO is attributed as the key factor in enhancing frictional chemical reactivity and material removal efficiency. The formed ZnO/CeO 2 heterojunction contributes to the effective separation of photogenerated carriers and the generation of highly oxidized reactive groups (O. 2 - , ˙OH, and HO˙ 2 ), which promotes the formation of photochemical reactive layers, softens the polishing substrate, and significantly improves the polishing performance of the abrasive. Three abrasives, CeO 2 , ZnO/CeO 2 , and commercial CeO 2 , were evaluated in terms of surface morphology , roughness (Sa), and material removal rate (MRR) following PCMP treatment. The polishing results revealed that the 3 % ZnO/CeO 2 abrasive achieved a high-quality flat surface with significantly reduced roughness (decreasing from 1.306 nm to 0.244 nm), Sa reduced by 81.3 %. In addition, the material removal rate (MRR) showed an improvement of 87.5 % and 50.0 % compared to CeO 2 and commercial CeO 2 , respectively.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Minerals Flotation and Separation Techniques · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (65)
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