journal article·2023-06

Superior resistive switching performance in SnO2 nanoparticles embedded TiO2 nanorods-based thin films

Faisal Alresheedi

Ceramics International· Volume 49· Issue 11
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (31)

Show source-provided references
1. First order rate law analysis for reset state in vanadium oxide thin film resistive random access memory devices10.3390/nano13010198 ↗
2. Halide perovskites: a new era of solution-processed electronics10.1002/adma.202005000 ↗
3. Enhancing resistive switching performance and ambient stability of hybrid perovskite single crystals via embedding colloidal quantum dots10.1002/adfm.202002948 ↗
4. Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces10.1080/14686996.2020.1736948 ↗
5. Impact of deposition parameters on the performance of ceria based resistive switching memories10.1088/0022-3727/49/29/295106 ↗
6. Optical, electrical and structural properties of nano-pyramidal zno films grown on glass substrate by spray pyrolysis technique10.1016/j.optmat.2014.02.012 ↗
7. One-dimensional zno nanostructures: fabrication, optoelectronic properties, and device applications10.1007/s10853-013-7541-0 ↗
8. Template deformation-tailored zno nanorod/nanowire arrays: full growth control and optimization of field-emission10.1002/adfm.200900714 ↗
9. Highly efficient one-dimensional zno nanowire-based dye-sensitized solar cell using a metal-free, d−π−a-type, carbazole derivative with more than 5% power conversion10.1021/am5026193 ↗
10. Structure and spectroscopic ellipsometry studies of nanocrystalline Dy2O3 thin films deposited on Al2O3 wafers by electron beam evaporation technique10.1016/j.jmrt.2021.04.008 ↗
11. Redox-based resistive switching memories – nanoionic mechanisms, prospects, and challenges10.1002/adma.200900375 ↗
12. Plasma enhanced multistate storage capability of single zno nanowire based memory10.1063/1.4906416 ↗
13. Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene–oxide interface10.1002/adma.201306028 ↗
14. Improving the electrical performance of resistive switching memory using doping technology10.1007/s11434-011-4930-0 ↗
15. Investigation of resistive switching in cu-doped hfo2thin film for multilevel non-volatile memory applications
16. Insertion of a si layer to reduce operation current for resistive random access memory applications10.1063/1.4812304 ↗
17. Tio2—a prototypical memristive material10.1088/0957-4484/22/25/254001 ↗
18. Electronic resistance switching in the al/tiox/al structure for forming-free and area-scalable memory10.1039/C4NR06417H ↗
19. Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal tio2 resistive memory on silicon10.1021/nl501249q ↗
20. Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application10.1016/j.rinp.2020.103325 ↗
21. Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application10.1016/j.jallcom.2022.166196 ↗
22. Stable and multilevel data storage resistive switching of organic bulk heterojunction10.3390/nano11020359 ↗
23. Evidence of filamentary switching in oxide-based memory devices via weak programming and retention failure analysis10.1038/srep13599 ↗
24. Stochastic memristive nature in co-doped ceo2 nanorod arrays10.1063/1.4851935 ↗
25. Electrochemical metallization memories—fundamentals, applications, prospects10.1088/0957-4484/22/28/289502 ↗
26. Electrochemical metallization cells—blending nanoionics into nanoelectronics?10.1557/mrs.2012.5 ↗
27. Programmable resistance switching in nanoscale two-terminal devices10.1021/nl803669s ↗
28. In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory10.1063/1.4790837 ↗
29. Coexistence of bipolar and unipolar switching of cu and oxygen vacancy nanofilaments in cu/taox/pt resistive devices10.1149/2.012201ssl ↗
30. Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature10.1063/1.4775760 ↗
31. Grain boundaries as preferential sites for resistive switching in the hfo2 resistive random access memory structures10.1063/1.3697648 ↗