Effect of Y2O3 interlayer on the electric properties of Y-doped HfO2 film deposited by chemical solution deposition
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OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials
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References (43)
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1. Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2[J]10.1109/LED.2011.2177435 ↗
2. Decoding the fingerprint of ferroelectric loops: comprehension of the material properties and structures[J]10.1111/jace.12773 ↗
3. Ferroelectric thin films: review of materials, properties, and applications[J]10.1063/1.2336999 ↗
4. Applications of modern ferroelectrics[J]10.1126/science.1129564 ↗
5. Ferroelectricity in hafnium oxide thin films[J]10.1063/1.3634052 ↗
6. Polarization and resistive switching in epitaxial 2 nm Hf0.5Zr0.5O2 tunnel junctions[J]10.1021/acsaelm.1c00604 ↗
7. Large tunnel electroresistance with ultrathin Hf0.5Zr0.5O2 ferroelectric tunnel barriers[J]
8. Enhanced ferroelectricity in ultrathin films grown directly on silicon[J]10.1038/s41586-020-2208-x ↗
9. An extensive study of the influence of dopants on the ferroelectric properties of HfO2[J]10.1039/C6TC04807B ↗
10. Chemical solution deposition of ferroelectric hafnium oxide for future lead free ferroelectric devices[J]10.1149/2.0061512jss ↗
11. Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes[J]
12. Engineering ferroelectric Hf0.5Zr0.5O2 thin films by epitaxial stress[J]10.1021/acsaelm.9b00256 ↗
13. Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization[J]10.1063/5.0029516 ↗
14. Ferroelectricity enhancement in Hf0.5Zr0.5O2 based tri-layer capacitors at low temperature (350 °C) annealing process[J]10.1109/LED.2021.3075082 ↗
15. Robust breakdown reliability and improved endurance in Hf0.5Zr0.5O2 ferroelectric using grain boundary interruption[J]10.1109/TED.2021.3126283 ↗
16. Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer[J]
17. Thermal expansion of HfO2 and ZrO2[J]10.1111/jace.12975 ↗
18. Effects on surface morphology of epitaxial Y2O3 layers on Si (001) after postgrowth annealing[J]10.1016/j.tsf.2004.05.076 ↗
19. Electrosynthesis of Y2O3 nanoparticles and its nanocomposite with POAP as high efficient electrode materials in energy storage device: surface, density of state and electrochemical investigation[J]10.1016/j.ssi.2019.05.008 ↗
20. Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films[J]10.1016/j.ceramint.2021.01.060 ↗
21. Influence of hafnium oxide on the structure and properties of powder and ceramics of the YSZ-Hf2O composition[J]10.1016/j.ceramint.2020.09.151 ↗
22. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: a first principles insight[J]10.1063/1.4867975 ↗
23. Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors[J]10.1088/0268-1242/29/5/055007 ↗
24. X-ray photoelectron spectroscopic studies on yttria, zirconia, and yttria-stabilized zirconia[J]10.1063/1.349611 ↗
25. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications[J]
26. Microstructure and interfacial properties of HfO2-Al2O3 nanolaminate films[J]10.1016/j.apsusc.2005.08.022 ↗
27. Effects of doping concentration and annealing temperatures on the ferroelectric memory properties of yttrium doped HfO2[J]10.1088/1361-6463/ac7f00 ↗
28. High ԑ gate dielectrics Gd2O3 and Y2O3 for silicon[J]10.1063/1.126899 ↗
29. First-principles study of structural, vibrational and lattice dielectric properties of hafnium oxide[J]10.1103/PhysRevB.65.233106 ↗
30. Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitor[J]10.1063/1.1644342 ↗
31. Giant permittivity in epitaxial ferroelectric heterostructures[J]10.1103/PhysRevLett.77.1628 ↗
32. The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films[J]10.1002/pssr.201510270 ↗
33. Stabilizing the ferroelectric phase in doped hafnium oxide[J]10.1063/1.4927805 ↗
34. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films[J]10.1016/j.actamat.2015.07.035 ↗
35. Phase transitions in ferroelectric silicon doped hafnium oxide[J]10.1063/1.3636434 ↗
36. Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing[J]10.1016/j.apsusc.2011.02.132 ↗
37. Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm[J]10.1063/1.5017094 ↗
38. Ferroelectric polarization switching of hafnium zirconium oxide in a ferroelectric/dielectric stack[J]10.1021/acsaelm.9b00092 ↗
39. Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon[J]10.1016/j.vacuum.2020.109835 ↗
40. Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes[J]10.1063/1.4879283 ↗
41. Dielectric stacking effect of Al2O3 and HfO2 in metal-insulator-metal capacitor[J]10.1109/LED.2012.2228162 ↗
42. Compositional and electronic properties of chemical-vapor-deposited Y2O3 thin film-Si(100) interfaces[J]10.1063/1.355112 ↗
43. A microscopic mechanism of dielectric breakdown in SiO2 films: an insight from multi-scale modeling[J]10.1063/1.4979915 ↗