SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (62)
Show source-provided references
1. Milligan · 2007 · 960
2. Recent advances on dielectrics technology for SiC and GaN power devices10.1016/j.apsusc.2014.01.063 ↗
3. Review of silicon carbide power devices and their applications10.1109/TIE.2017.2652401 ↗
4. Bias temperature instability in SiC metal oxide semiconductor devices10.1088/1361-6463/abcd5e ↗
5. Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs10.7567/JJAP.55.04EA03 ↗
6. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs10.1016/j.microrel.2017.11.020 ↗
7. Trapping of majority carriers in SiO2/4H-SiC structures10.1088/0022-3727/42/12/125301 ↗
8. Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films10.1016/S0169-4332(01)00491-3 ↗
9. Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors10.1016/j.apsusc.2016.11.142 ↗
10. Border traps and bias-temperature instabilities in MOS devices10.1016/j.microrel.2017.11.007 ↗
11. Atomic-scale origins of bias-temperature instabilities in SiC–SiO 2 structures10.1063/1.3554428 ↗
12. Ettisserry · 2014 · 61
13. Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interface region10.1016/j.apsusc.2020.145889 ↗
14. An amorphous SiO2/4H-SiC(0001) interface: band offsets and accurate charge transition levels of typical defects10.1016/j.ssc.2014.12.020 ↗
15. Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x-ray photoelectron spectroscopy10.1063/1.3628322 ↗
16. Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing10.1016/j.physb.2013.09.043 ↗
17. Modified Deal Grove model for the thermal oxidation of silicon carbide10.1063/1.1690097 ↗
18. Investigation of thermally grown oxide on 4H-SiC by a combination of H2O and HNO3 vapor with varied HNO3 solution heating temperature10.1016/j.apsusc.2013.08.131 ↗
19. Phosphorous passivation of the SiO2/4H–SiC interface10.1016/j.sse.2011.10.030 ↗
20. Sodium enhanced oxidation of Si-face 4H-SiC: a method to remove near interface traps10.4028/www.scientific.net/MSF.556-557.487 ↗
21. Advanced processing for mobility improvement in 4H-SiC MOSFETs: a review10.1016/j.mssp.2017.10.030 ↗
22. Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection10.1088/1361-6463/ab41dc ↗
23. Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface10.1063/1.2940736 ↗
24. Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide10.1063/1.4722782 ↗
25. Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics
26. Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: a first-principles study
27. Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET10.1063/1.5112779 ↗
28. Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors10.1088/1674-4926/35/2/024002 ↗
29. Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of V fb instability on 4H-SiC (0001) Si-face10.1063/1.5042038 ↗
30. Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors10.1016/j.apsusc.2020.147312 ↗
31. Study of the wet Re-oxidation annealing of SiO2/4H-SiC (0001) interface properties by AR-XPS measurements10.4028/www.scientific.net/MSF.433-436.555 ↗
32. Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing10.1063/1.4730435 ↗
33. Effects of surface properties on barrier height and barrier inhomogeneities of platinum contacts to n-type 4H-SiC
34. Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma10.1016/j.apsusc.2011.07.012 ↗
35. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing10.1016/j.apsusc.2015.07.100 ↗
36. Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors10.1063/1.4898009 ↗
37. Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing10.1016/j.ceramint.2018.04.190 ↗
38. Verification of Fowler–Nordheim electron tunneling mechanism in Ni/SiO 2/n -4H SiC and n + poly-Si/SiO 2/n -4H SiC MOS devices by different models10.1016/j.physb.2016.07.013 ↗
39. Fowler–Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices10.1016/j.sse.2015.08.017 ↗
40. Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient10.1063/1.1598621 ↗
41. Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors[J]10.1063/1.5084759 ↗
42. Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress10.1088/1361-6463/ab2faf ↗
43. Removal efficiency of organic contaminants on Si wafer by dry cleaning using UV/O3 and ECR plasma10.1016/S0169-4332(02)01215-1 ↗
44. Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate10.1063/1.4922536 ↗
45. Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors10.1016/j.apsusc.2020.145837 ↗
46. Modeling and applications of silent discharge plasmas10.1109/27.106829 ↗
47. Theoretical and experimental study on ozone generation characteristics of an oxygen-fed ozone generator in silent discharge10.1088/0022-3727/30/17/011 ↗
48. Ozone generation by a DC driven micro-hollow cathode discharge in nitrogen-mixed oxygen flow10.1143/JJAP.43.6381 ↗
49. Efficiency of ozone production in coplanar dielectric barrier discharge10.1007/s11090-019-09993-6 ↗
50. High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
51. Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation10.1038/srep34945 ↗
52. Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface
53. Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility10.1063/1.3144272 ↗
54. Defect levels of carbon-related defects at the SiC/SiO 2 interface from hybrid functionals10.1103/PhysRevB.83.195319 ↗
55. Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures10.1063/1.3553786 ↗
56. Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing10.1063/1.4818141 ↗
57. Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2interface through hybrid functionals
58. Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma10.1063/1.4878661 ↗
59. Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing10.1016/j.apsusc.2015.12.226 ↗
60. Interface states atSiO2/6H−SiC(0001)interfaces observed by x-ray photoelectron spectroscopy measurements under bias: comparison between dry and wet oxidation10.1103/PhysRevB.67.115305 ↗
61. High energy photoemission investigations of SiO2/SiC samples10.1016/S0169-4332(00)00858-8 ↗
62. Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors10.1016/j.apsusc.2019.05.241 ↗