Source abstract
Abstract
BackgroundMetrology techniques with high accuracy and throughput are needed to address critical challenges in the characterization of periodic nanostructured materials. Copper interconnects are structures for which precise topography characterization is needed. Although common methods include atomic force and scanning electron microscopy, extreme-ultraviolet (EUV) scatterometry has unique capabilities for the characterization of structure parameters and material properties.AimWe study the effect of experimental design parameters (wavelength and incidence angle) on EUV scatterometry. We explore the fundamental sensitivity capabilities of EUV scatterometry for interconnect metrology when data are collected such that the information content in a single EUV diffraction pattern is maximized by tuning the wavelength and incidence angle.ApproachWe applied experimental design methods based on the Fisher information matrix to EUV scatterometry of an interconnect to obtain the optimized EUV wavelength and angles at which to obtain a single diffraction pattern. Using rigorous coupled wave analysis simulations and Monte Carlo uncertainty quantification, the accuracy of the parameter reconstructions under an optimal design is quantified.ResultsThe uncertainty of the sample parameters depends strongly on wavelength and incidence angle, necessitating experimental design methods to achieve maximal sensitivity. When data are collected under an optimal experimental design, simulations indicate that sub-angstrom accuracy can be obtained from only a single diffraction pattern for the dishing depth of interconnect pads (0.02 nm standard deviation), and the substrate density can additionally be extracted (0.015 g/cm3 standard deviation). Decorrelation of the sample parameters is observed with optimal design, and 13.8 nm EUV light provides better sensitivity than longer wavelengths such as 30 nm.ConclusionsExperimental design methods are an essential tool for ensuring that experimental data are collected under an optimal design that maximizes the information in the data. Implementing these methods opens further capabilities for fast and precise interconnect metrology with EUV scatterometry.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Optical Coatings and Gratings · Copper Interconnects and Reliability · Microwave and Dielectric Measurement Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Colorado & NIST, JILA & STROBE NSF Science & Technology Center, Department of Physics, Boulder, Colorado, United States
Samsung Electronics Co., Ltd., Core Technology R&D Team, Mechatronics Research, Hwasung, Republic of Korea
Samsung Electronics Co., Ltd., Advanced Process Development Lab 4, Semiconductor R&D Center, Hwasung, Republic of Korea
Funding
STROBE NSF Science and Technology Center · U.S. Air Force Office Multidisciplinary University Research Initiative (MURI) Program
References
Reference metadata was not supplied for this record.