journal article·2023-05

Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient

Kammutty Musliyarakath Abdul Shekkeer, Junchen Deng, Kuan Yew Cheong, Kadiarakath Manathparambil Riyas, Hock Jin Quah

Ceramics International· Volume 49· Issue 9
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OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Electronic and Structural Properties of Oxides

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References (76)

Show source-provided references
1. Future of nano CMOS technology10.1016/j.sse.2015.02.005 ↗
2. An insight into the DC and analog/RF response of a junctionless vertical super-thin body FET towards high-K gate dielectrics
3. Critical reliability challenges in scaling SiO2-based dielectric to its limit10.1016/S0026-2714(03)00169-0 ↗
4. A future of function or failure? [CMOS gate oxide scaling]10.1109/101.994857 ↗
5. Rare-earth oxide thin films for gate dielectrics in microelectronics10.1016/j.jallcom.2005.10.061 ↗
6. Review on high-k dielectrics reliability issues10.1109/TDMR.2005.845236 ↗
7. High-k gate dielectrics10.1149/2.F05052IF ↗
8. He · 2012 · 1
9. A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices10.1016/j.spmi.2016.04.032 ↗
10. Interfacial and electrical characterization in metal–oxide–semiconductor field-effect transistors with CeO2 gate dielectric10.1143/JJAP.48.04C014 ↗
11. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO210.1063/1.1458692 ↗
12. Structural and electrical characteristics of thin erbium oxide gate dielectrics10.1063/1.2399938 ↗
13. Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition10.1016/j.apsusc.2004.03.232 ↗
14. CVD-derived Hf-based high- k gate dielectrics10.1080/10408436.2012.729766 ↗
15. Deposition of lanthanum zirconium oxide high- k films by liquid injection ALD and MOCVD10.1002/cvde.200706637 ↗
16. Electrical properties of single crystalline CeO2 high-k gate dielectrics directly grown on Si (111)10.1143/JJAP.41.2480 ↗
17. Improved characteristics of ultrathin CeO2 by using postnitridation annealing10.1149/1.1640630 ↗
18. Optical and electrical characterizations of cerium oxide thin films10.1088/0022-3727/43/7/075104 ↗
19. Electrical characterization of CeO2∕ Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric10.1063/1.2838746 ↗
20. Current conduction mechanisms in CeO2 thin films, Electrochem10.1149/1.2897755 ↗
21. High-k dielectrics for 4H-silicon carbide: present status and future perspectives10.1039/D0TC05008C ↗
22. Dielectric relaxation of high-k oxides
23. Enhanced room-temperature ferromagnetism on Co-doped CeO2 nanoparticles: mechanism and electronic and optical properties10.1021/jp505175t ↗
24. Morphology effect of CeO2 support in the preparation, metal–support interaction, and catalytic performance of Pt/CeO2 catalysts10.1002/cctc.201300709 ↗
25. Ferromagnetism induced by oxygen and cerium vacancies above the percolation limit in CeO210.1088/0953-8984/22/21/216004 ↗
26. Structure-dependent electronic properties of nanocrystalline cerium oxide films10.1103/PhysRevB.68.035104 ↗
27. Cobalt oxide thin flms prepared by NSP technique: impact of molar concentration on the structural, optical, morphological and electrical properties10.1016/j.ijleo.2016.03.008 ↗
28. Structural and electrical properties of crystalline CeO2 films formed by metalorganic decomposition10.1143/JJAP.37.4158 ↗
29. Atomic mechanism of electric dipole formed at high-k: SiO2 interface10.1063/1.3583655 ↗
30. Controlling oxygen vacancies and enhanced visible light photocatalysis of CeO2/ZnO nanocomposites10.1016/j.jphotochem.2019.112156 ↗
31. Theoretical study of CeO2 doped with tetravalent ions10.1103/PhysRevB.76.174119 ↗
32. Computational testing of trivalent dopants in CeO2 for improved high-κ dielectric behaviour10.1039/C2TC00385F ↗
33. Comparative study on the preparation, characterization and catalytic performances of 3DOM Ce-based materials for the combustion of diesel soot10.1016/j.apcatb.2011.07.029 ↗
34. First-principles study of dielectric properties of cerium oxide10.1016/j.tsf.2004.11.240 ↗
35. The hysteresis caused by interface trap and anomalous positive charge in Al/CeO2–SiO2/silicon capacitors10.1143/JJAP.36.L1681 ↗
36. Structural properties and sensing performance of CeYxOy sensing films for electrolyte–insulator–semiconductor pH sensors
37. Modeling of CeO2, Ce2O3, and CeO2− x in the LDA+ U formalism10.1103/PhysRevB.75.035109 ↗
38. Redox properties of water on the oxidized and reduced surfaces of CeO2 (111)10.1016/S0039-6028(02)02657-2 ↗
39. Structural, morphological, electrical and dielectric properties of Mn doped CeO210.1016/j.jallcom.2016.02.153 ↗
40. Dielectric relaxations in the Ce1-xYbxO2-δ System10.1143/JJAP.47.212 ↗
41. Photoluminescence emission behavior on the reduced band gap of Fe doping in CeO2-SiO2 nanocomposite and photophysical properties10.1016/j.jscs.2018.10.002 ↗
42. Relationship between oxide-ion conductivity and dielectric relaxation in Sm-doped CeO210.1016/j.ssi.2007.04.013 ↗
43. Defects and conductivity in ceria-based oxides10.1246/cl.2008.1012 ↗
44. Impact of structural strained layer near SiO2/Si interface on activation energy of time-dependent dielectric breakdown10.1143/JJAP.39.4687 ↗
45. Effects of Zn2+ and Ga3+ doping on the quantum yield of cluster derived InP quantum dots10.1063/1.5126971 ↗
46. Predicting ionic conductivity of solid oxide fuel cell electrolyte from first principles10.1063/1.2135889 ↗
47. Ion distribution models for defect fluorite ZrO2-AO1. 5 (A= Ln, Y) solid solutions: I. Relationship between lattice parameter and composition10.1016/j.actamat.2020.10.045 ↗
48. EXAFS study of Yttria‐stabilized zirconia10.1111/j.1151-2916.1986.tb07425.x ↗
49. Electrical properties and reducibilities of ceria-rare earth oxide systems and their application to solid oxide fuel cell10.1016/0167-2738(89)90061-1 ↗
50. Gallium doping effects for improving switching performance of p-type copper (I) oxide thin-film transistors10.1021/acsami.0c09243 ↗
51. Growth of quaternary GaxCe1-xOyNz passivation layer for silicon based metal-oxide-semiconductor capacitor10.1016/j.matchemphys.2022.126549 ↗
52. Growth of metal‐organic decomposed ternary GaxCeyOz films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor10.1002/er.7520 ↗
53. Pure and doped CeO2 thin films prepared by MOCVD process10.1016/S0040-6090(97)01215-7 ↗
54. Nitrogen-doped CeOx nanoparticles modified graphitic carbon nitride for enhanced photocatalytic hydrogen production10.1039/C4GC01683A ↗
55. Synergetic effects of monoethanolamine (MEA) and post-deposition calcination on biosynthesized CeO2 nanostructures spin-coated on silicon substrate
56. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum10.1080/14786435608238074 ↗
57. Effect of sputtering target power on preferred orientation in nc-TiN/a-SiNx nanocomposite thin films
58. X-ray diffraction, Raman and photoluminescence studies of nanocrystalline cerium oxide thin films10.1016/j.ceramint.2013.03.103 ↗
59. Annealing temperature and oxygen-vacancy-dependent variation of lattice strain, band gap and luminescence properties of CeO2 nanoparticles10.1080/17458080.2013.801566 ↗
60. Tuning of structural, optical, and impedance properties of CeO2 thin films by incorporation palladium ions10.1007/s10854-020-03547-9 ↗
61. Effect of annealing temperature on physical and electrical properties of solution processed polycrystalline In2Ga2ZnO7 thin film10.1007/s10854-020-03516-2 ↗
62. Synthesis and optical properties of CeO2 nanocrystalline films grown by pulsed electron beam deposition10.1007/s10853-008-2750-7 ↗
63. Indium gallium oxide alloys: electronic structure, optical gap, surface space charge, and chemical trends within common-cation semiconductors10.1021/acsami.0c16021 ↗
64. Tuning the band gap, electronic polarizability and conduction mechanism of DyxZn1−xO nanostructures: the role of band tail states10.1088/2053-1591/aae734 ↗
65. Evaluation of TiO2/SiO2 dielectric thin films to overcome the challenges of CMOS scaling
66. Effects of post-deposition annealing of cerium oxide passivation layer in nitrogen-oxygen-nitrogen ambient10.1002/er.8184 ↗
67. Passivation of oxygen vacancy states in HfO2 by nitrogen10.1063/1.2173688 ↗
68. Schroder · 2015
69. The main electrical and interfacial properties of benzotriazole and fluorene based organic devices10.1080/10601325.2013.741864 ↗
70. Border trap extraction with capacitance- equivalent thickness to reflect the quantum mechanical effect on atomic layer deposition high-k/In0.53Ga0.47As on 300-mm Si substrate10.1038/s41598-019-46317-2 ↗
71. Border traps: issues for MOS radiation resposnse and long-term reliability10.1016/0026-2714(95)93068-L ↗
72. defects and conductivity in ceria-based oxides10.1246/cl.2008.1012 ↗
73. Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals10.1063/1.3281027 ↗
74. Effects of oxide traps, interface traps and border traps on metal oxide semiconductor devices10.1063/1.353777 ↗
75. Nicollian · 1982
76. On the Origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors10.1063/1.4896900 ↗