journal article·2023-10-31

In situ electrical property quantification of memory devices by modulated electron microscopy

Muneyuki Fukuda, Kazuhisa Hasumi, Takashi Nobuhara, Hirohiko Kitsuki, Zhigang Wang, Kazuhiro Nojima, Yusaku Suzuki, Akira Hamaguchi, Masashi Kubo, Masaya Hosokawa

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Abstract

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Research context

OpenAlex topics: Semiconductor materials and devices · Electron and X-Ray Spectroscopy Techniques · Integrated Circuits and Semiconductor Failure Analysis

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Affiliations

Hitachi High-Tech Corporation, Nano-Technology Solution Business Group, Hitachinaka-shi, Japan

KIOXIA Corporation, Advanced Memory Development Center, Yokkaichi-shi, Japan

Western Digital, Department Advanced Process and Device Development Group, Yokkaichi-shi, Japan

References (8)

Show source-provided references
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6. Development of in-line measurement method for transistor threshold voltage using SEM
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8. 10.1016/j.apsusc.2018.04.15510.1016/j.apsusc.2018.04.155 ↗