Fabrication of a novel Mn-based slurry via chemical precipitation and ultrasonic impregnation for efficient planarization of 4H-SiC (0001) through chemical mechanical polishing
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Aluminum Alloys Composites Properties · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
Show source-provided references
1. Development of lapping and polishing technologies of 4H-SiC wafers for power device applications10.4028/www.scientific.net/MSF.600-603.819 ↗
2. Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces10.1016/j.cirp.2009.03.115 ↗
3. Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry10.1016/j.surfcoat.2014.03.044 ↗
4. Mechanochemical polishing of silicon carbide single crystal with chromium(III) oxide abrasive10.1111/j.1151-2916.1992.tb05463.x ↗
5. Tribochemical polishing of silicon carbide in oxidant solution
6. Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC10.1007/s11664-001-0111-2 ↗
7. Pad conditioning in chemical mechanical polishing10.1016/S0924-0136(01)01137-2 ↗
8. Atomic-Step observations on 6H- and 15r-SiC polished surfaces10.4028/www.scientific.net/MSF.389-393.729 ↗
9. Polishing-pad-free electrochemical mechanical polishing of single-crystalline SiC surfaces using polyurethane–CeO2 core–shell particles10.1016/j.ijmachtools.2016.11.007 ↗
10. Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO 2 -coated diamond abrasive10.1016/j.precisioneng.2017.02.011 ↗
11. UV-TiO2 photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer10.1080/10426914.2017.1364855 ↗
12. Chemical mechanical polishing (CMP) of SiC wafer using photo-catalyst incorporated pad10.1149/2.0061709jss ↗
13. Study of cluster magnetorheological-chemical mechanical polishing technology for the atomic scale ultra-smooth surface planarization of SiC10.4028/www.scientific.net/AMR.797.284 ↗
14. Surface polishing by electrochemical etching of p-type 4H SiC10.1063/1.3212541 ↗
15. High-integrity finishing of 4H-SiC (0001) by plasma-assisted polishing10.4028/www.scientific.net/AMR.126-128.423 ↗
16. Defect-engineered MnO2 as catalyst for the chemical mechanical polishing of silicon carbide wafer10.1149/2162-8777/ace73d ↗
17. Synthesis of Al2O3@MnO2 composite abrasives and their chemical mechanical polishing performance on silicon carbide (SiC)10.1016/j.ceramint.2024.03.120 ↗
18. Preparation of SiO2@MnO2 composite abrasives and their performance in chemical-mechanical polishing of SiC substrates10.1016/j.ceramint.2024.06.288 ↗
19. On the structure of γ-Al2O310.1016/j.jcat.2020.10.010 ↗
20. Experimental review: chemical reduction of graphene oxide (GO) to reduced graphene oxide (rGO) by aqueous chemistry10.1039/C7NR02943H ↗
21. Effect of synergistic CeO2/MoS2 abrasives on surface roughness and material removal rate of quartz glass10.1016/j.ceramint.2024.09.217 ↗
22. Polishing performance and mechanism of a novel Fe-based slurry for chemical mechanical polishing10.1016/j.triboint.2024.109549 ↗
23. Improvement in the planarization of 4H-SiC (0001) achieved by photo-assisted chemical mechanical polishing (P-CMP) using nano TiO2-based composite abrasive with heterostructure
24. An improved Hummers method for eco-friendly synthesis of graphene oxide10.1016/j.carbon.2013.07.055 ↗
25. High-efficient synthesis of graphene oxide based on improved hummers method
26. Fe(III) adsorption on graphene oxide: a low-cost and simple modification method for persulfate activation10.1016/j.cej.2020.124012 ↗
27. Effect of rare earth (RE–La, Pr, Nd) metal-doped ceria nanoparticles on catalytic hydrogen iodide decomposition for hydrogen production10.1016/j.ijhydene.2018.01.096 ↗
28. Immobilization of Kluyveromyces lactis β galactosidase on concanavalin A layered aluminium oxide nanoparticles—its future aspects in biosensor applications10.1016/j.molcatb.2011.02.016 ↗
29. Fabrication of GO–MnO2 nanocomposite using hydrothermal process for cationic and anionic dyes adsorption: kinetics, isotherm, and reusability10.1016/j.jece.2021.106045 ↗
30. Graphene oxide-supported nanoscale zero-valent iron composites for the removal of atrazine from aqueous solution10.1016/j.colsurfa.2020.124466 ↗
31. In situ characterization of the initial effect of water on molecular interactions at the interface of organic/inorganic hybrid systems10.1038/srep45123 ↗
32. Study of optical and structural properties of GO and MnO2-GO hybrid fabricated by spray pyrolysis technique10.1016/j.optmat.2021.111849 ↗
33. Polishing performance and mechanism of a water-based nanosuspension using diamond particles and GO nanosheets as additives10.1016/j.triboint.2021.107241 ↗
34. Synergistic tribological performance of a water based lubricant using graphene oxide and alumina hybrid nanoparticles as additives10.1016/j.triboint.2019.02.031 ↗
35. Development of tight-binding, chemical-reaction-dynamics simulator for combinatorial computational chemistry10.1016/S0169-4332(03)00912-7 ↗
36. Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization10.1016/j.apsusc.2013.07.080 ↗
37. Electrochemical corrosion and chemical mechanical polishing of single-crystal SiC
38. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials10.1016/j.cap.2012.02.016 ↗
39. The effects of SiO 2 coating on diamond abrasives in sol-gel tool for SiC substrate polishing10.1016/j.diamond.2017.05.003 ↗
40. Material removal rate of 4H-SiC polishing with polystyrene/CeO2 core/shell abrasives10.1149/2162-8777/abba03 ↗
41. The effect of Cu2+ ions and Glycine complex on chemical mechanical polishing (CMP) performance of SiC substrates10.1007/s11249-021-01468-0 ↗
42. Molecular dynamics study of the removal mechanism of SiC in a fixed abrasive polishing in water lubrication10.1016/j.ceramint.2020.06.282 ↗
43. The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC10.1039/C6RA27508G ↗
44. Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates10.1016/j.apsusc.2015.10.158 ↗
45. Effect of oxidizer concentration on chemical mechanical polishing of 4H-SiC