Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence
Source abstract
Abstract
Constrained by the inefficiency of traditional trial-and-error methods, especially when dealing with thousands of candidate materials, the swift discovery of materials with specific properties remains a central challenge in contemporary materials research. This study employed an artificial intelligence-driven materials design framework for identifying dopants that impart antiferroelectric properties to HfO 2 materials. This strategy integrates density functional theory (DFT) with machine learning (ML) techniques to swiftly screen HfO 2 materials exhibiting stable antiferroelectric properties based on the critical electric field. This approach aims to overcome the high cost and lengthy cycles associated with traditional trial-and-error and experimental methods. Among 30 undeveloped dopants, four candidate dopants demonstrating stable antiferroelectric properties were identified. Subsequent DFT analysis highlighted the Ga dopant, which displayed favorable characteristics such as a small volume change, minimal lattice deformation, and a low critical electric field after incorporation into hafnium oxide. These findings suggest the potential for stable antiferroelectric performance. Essentially, we established a correlation between the physical characteristics of hafnium oxide dopants and their antiferroelectric performance. The approach facilitates large-scale ML predictions, rendering it applicable to a broad spectrum of functional material designs. • Taking into account the random arrangement of dopant atoms, 225 structural models of HfO 2 were constructed. • A critical electric field theory was proposed for evaluating the antiferroelectric properties of HfO 2 materials. • Physical insights into the stability of the antiferroelectric phase in HfO 2 was extracted through machine learning models. • The antiferroelectric properties of HfO 2 materials doped with novel dopants was predicted and revealed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (50)
Show source-provided references
1. Antiferroelectric oxide thin-films: fundamentals, properties, and applications10.1016/j.pmatsci.2023.101231 ↗
2. Low voltage-driven high-performance thermal switching in antiferroelectric PbZrO3 thin films10.1126/science.adj9669 ↗
3. Antiferroelectric domain modulation enhancing energy storage performance by phase-field simulations
4. Ferroelectricity in hafnium oxide thin films10.1063/1.3634052 ↗
5. Recent progress in ferroelectric synapses and their applications10.1007/s40843-022-2318-9 ↗
6. Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers10.1016/j.jmat.2023.05.013 ↗
7. Ultralow operating voltage for energy conversion performance in Hf1–xZrxO2 thin films10.1016/j.jmat.2024.01.001 ↗
8. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage10.1063/1.4989908 ↗
9. Ultrahigh energy storage density in superparaelectric-like Hf0.2Zr0.8O2 electrostatic supercapacitors10.1002/advs.202300792 ↗
10. Fluorite-structured ferroelectric-/antiferroelectric-based electrostatic nanocapacitors for energy storage applications10.1021/acsaem.0c00987 ↗
11. Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors10.1016/j.nanoen.2017.07.017 ↗
12. Intrinsic ferroelectricity in Y-doped HfO2 thin films10.1038/s41563-022-01282-6 ↗
13. A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants10.1039/C7TC01200D ↗
14. Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films
15. Temperature-dependent subcycling behavior of Si-doped HfO 2 ferroelectric thin films10.1021/acsaelm.1c00330 ↗
16. Stable subloop behavior in ferroelectric Si-doped HfO210.1021/acsami.9b12878 ↗
17. Depolarization as driving force in antiferroelectric hafnia and ferroelectric wake-up10.1021/acsaelm.0c00184 ↗
18. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films10.1063/1.4829064 ↗
19. On the origin of wake-up and antiferroelectric-like behavior in ferroelectric hafnium oxide10.1002/pssr.202170022 ↗
20. Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films10.1063/1.5055258 ↗
21. Nonvolatile random access memory and energy storage based on antiferroelectric like hysteresis in ZrO210.1002/adfm.201603182 ↗
22. The origin of ferroelectricity in Hf1−xZrxO2: a computational investigation and a surface energy model10.1063/1.4916707 ↗
23. Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition10.1063/5.0051068 ↗
24. Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes10.1063/5.0083656 ↗
25. Superhigh energy storage density on-chip capacitors with ferroelectric Hf0.5Zr0.5O2/antiferroelectric Hf0.25Zr0.75O2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition10.1039/D2NA00427E ↗
26. Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: a comparative study and prediction10.1016/j.actamat.2018.05.033 ↗
27. Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric10.1002/adma.201403115 ↗
28. Ferroelectricity in simple binary ZrO2 and HfO210.1021/nl302049k ↗
29. Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications10.1016/j.nanoen.2017.04.052 ↗
30. Interpretable machine learning model of effective mass in perovskite oxides with cross-scale features
31. Prediction of nature of band gap of perovskite oxides (ABO3) using a machine learning approach
32. Machine learning for molecular and materials science10.1038/s41586-018-0337-2 ↗
33. Enabling catalyst discovery through machine learning and high-throughput experimentation10.1021/acs.chemmater.9b03043 ↗
34. Experimental search for high-temperature ferroelectric perovskites guided by two-step machine learning10.1038/s41467-018-03821-9 ↗
35. Using feature-assisted machine learning algorithms to boost polarity in lead-free multicomponent niobate alloys for high-performance ferroelectrics10.1002/advs.202104569 ↗
36. Interpretable and explainable machine learning for materials science and chemistry10.1021/accountsmr.1c00244 ↗
37. Charge-compensated co-doping stabilizes robust hafnium oxide ferroelectricity10.1039/D4TC00281D ↗
38. Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y10.1038/s41563-020-00897-x ↗
39. Lanthanum-doped hafnium oxide: a robust ferroelectric material10.1021/acs.inorgchem.7b03149 ↗
40. Large remanent polarization in Ta-doped HfO2 thin films by reactive sputtering10.1063/5.0055068 ↗
41. Antiferroelectricity in thin-film ZrO2 from first principles10.1103/PhysRevB.90.140103 ↗
42. Incipient ferroelectricity in Al-doped HfO2 thin films10.1002/adfm.201103119 ↗
43. Dielectric, energy storage, and loss study of antiferroelectric-like Al-doped HfO2 thin films10.1063/5.0029706 ↗
44. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films10.1016/j.tsf.2012.11.125 ↗
45. Antiferroelectric phase evolution in HfxZr1-xO2 thin film toward high endurance of non-volatile memory devices10.1109/LED.2022.3217813 ↗
46. Thin HfxZr1–xO2 films: a new lead-free system for electrostatic supercapacitors with large energy storage density and robust thermal stability10.1002/aenm.201400610 ↗
47. High endurance and low fatigue effect of bilayer stacked antiferroelectric/ferroelectric HfxZr1–xO210.1109/LED.2021.3134178 ↗
48. Transferable and extensible machine learning-derived atomic charges for modeling hybrid nanoporous materials
49. On-the-fly interpretable machine learning for rapid discovery of two-dimensional ferromagnets with high Curie temperature10.1016/j.chempr.2021.11.009 ↗
50. Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping10.1038/s41467-024-47194-8 ↗