Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO
Source abstract
Abstract
Abstract The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250 °C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 μV/K and an electrical conductivity of 1808.32 S/cm, with a maximum power factor of 0.66 mW/mK 2 .
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Gas Sensing Nanomaterials and Sensors · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. Cooling, heating, generating power, and recovering waste heat with thermoelectric systems10.1126/science.1158899 ↗
2. A review on thermoelectric renewable energy: principle parameters that affect their performance10.1016/j.rser.2013.10.027 ↗
3. Thin-film thermoelectric devices with high room-temperature figures of merit10.1038/35098012 ↗
4. Solution-based synthesis and characterization of earth abundant Cu3(As,Sb)Se4nanocrystal alloys: towards scalable room-temperature thermoelectric devices10.1039/C5TA07546G ↗
5. Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe10.1126/science.aad3749 ↗
6. Toward high‐thermoelectric‐performance large‐size nanostructured BiSbTe alloys via optimization of sintering‐temperature distribution10.1002/aenm.201600595 ↗
7. Local phonon mode in thermoelectric Bi2Te2Se from charge neutral antisites10.1063/1.4941022 ↗
8. An oxide single crystal with high thermoelectric performance in air10.1143/JJAP.39.L1127 ↗
9. Oxide thermoelectric materials: a nanostructuring approach10.1146/annurev-matsci-070909-104521 ↗
10. Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant10.1016/j.surfcoat.2014.02.012 ↗
11. New n-type transparent conducting oxides10.1557/mrs2000.149 ↗
12. ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications10.1016/S0040-6090(03)00243-8 ↗
13. Transparent aluminium zinc oxide thin films with enhanced thermoelectric properties10.1039/C3TA15052F ↗
14. Thermoelectric properties of Al-doped ZnO as a promising oxidematerial for high-temperature thermoelectric conversion10.1039/a602506d ↗
15. High thermoelectric performance of dually doped ZnO ceramics10.1007/s11664-009-0816-1 ↗
16. Thermoelectric properties of homologous compounds in the ZnO–In2O3 system10.1111/j.1151-2916.1996.tb08958.x ↗
17. Thermoelectric power factor enhancement of AZO/In-AZO quantum well multilayer structures as compared to bulk films10.1016/j.jallcom.2012.04.029 ↗
18. Influence of aluminium doping on thermoelectric performance of atomic layer deposited ZnO thin films10.1063/1.4831980 ↗
19. Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films10.1039/c3tc30215f ↗
20. Growth characteristics and film properties of gallium doped zinc oxide prepared by atomic layer deposition10.1007/s10832-013-9848-2 ↗
21. Atomic layer deposition of Ga2O3 films using trimethylgallium and ozone10.1021/cm300712x ↗
22. Sol–gel preparation, characterization and studies on electrical and thermoelectrical properties of gallium doped zinc oxide films10.1016/S0167-577X(02)00865-0 ↗
23. Thermoelectric transport properties of naturally nanostructured Ga–ZnO ceramics: effect of point defect and interfaces10.1016/j.jeurceramsoc.2016.02.017 ↗
24. Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium10.1063/1.351977 ↗
25. Studies on optical, structural and electrical properties of atomic layer deposited Al-doped ZnO thin films with various Al concentrations and deposition temperatures10.1088/0022-3727/44/44/445305 ↗
26. Growth and characterization of conducting ZnO thin films by atomic layer deposition10.5012/bkcs.2010.31.9.2503 ↗
27. Studies on optical, structural and electrical properties of atomic layer deposited Al-doped ZnO thin films with various Al concentrations and deposition temperatures10.1088/0022-3727/44/44/445305 ↗
28. Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films10.1186/1556-276X-7-639 ↗
29. Al-doped zinc oxide nanocomposites with enhanced thermoelectric properties10.1021/nl202439h ↗
30. Correlations between thermoelectric properties and effective mass caused by lattice distortion in Al-doped ZnO ceramics10.1016/j.jeurceramsoc.2008.09.014 ↗
31. Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films10.1063/1.3447981 ↗
32. Complex thermoelectric materials10.1038/nmat2090 ↗
33. High-temperature charge transport and thermoelectric properties of a degenerately Al-doped ZnO nanocomposite10.1039/c2jm31763j ↗
34. Structurally nanocrystalline-electrically single crystalline ZnO-reduced graphene oxide composites10.1021/nl5018089 ↗
35. Ioffe · 1957
36. Polar semiconductor ZnO under inplane tensile strain10.1103/PhysRevB.77.045213 ↗
37. Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films10.1088/0022-3727/41/19/195409 ↗
38. Direct measurement of density-of-states effective mass and scattering parameter in transparent conducting oxides using second-order transport phenomena10.1116/1.1290372 ↗
39. High performance n-type (Bi,Sb)2(Te,Se)3 for low temperature thermoelectric generator10.1088/0022-3727/43/33/335404 ↗
40. Silk fabric-based wearable thermoelectric generator for energy harvesting from the human body10.1016/j.apenergy.2015.11.038 ↗
41. Modeling, experimental study and optimization on low-temperature waste heat thermoelectric generator system10.1016/j.apenergy.2010.02.013 ↗