Microwave dielectric properties of Ti3SiC2 powders synthesized by solid state reaction
Source abstract
Abstract
Abstract Ti 3 SiC 2 powders were synthesized by the solid state reaction in a vacuum using Ti/Si/TiC mixture powders as the starting materials. X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy were utilized in analyzing phase, morphology, and chemical composition of the prepared powders, respectively. It was found that the powder synthesized at 1350 °C had the higher purity of Ti 3 SiC 2 . The dielectric permittivities of Ti 3 SiC 2 samples were determined in the frequency range of 8.2–12.4 GHz. Results showed that the sample with higher purity of Ti 3 SiC 2 had the greater real part of complex permittivity e ′ and dielectric loss tan δ , indicating a good application prospect in microwave absorbing materials. The mechanism of microwave dielectric loss for Ti 3 SiC 2 was discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: MXene and MAX Phase Materials · Microwave-Assisted Synthesis and Applications · Aluminum Alloys Composites Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Dielectric characterization of materials at microwave frequency range10.1590/S1516-14392003000100017 ↗
2. X-Band microwave characterization of carbon-based nanocomposite material, absorption capability comparison and RAS design simulation10.1016/j.compscitech.2009.11.015 ↗
3. (Fe, Ni)/C nanocapsules for electromagnetic-wave-absorber in the whole Ku-band10.1016/j.carbon.2008.10.028 ↗
4. Microwave absorption properties of a wave-absorbing coating employing carbonyl-iron powder and carbon black10.1016/j.apsusc.2010.07.078 ↗
5. Microwave absorption properties of Sr2FeMoO6 nanoparticles10.1016/j.physb.2011.03.024 ↗
6. Magnetic and microwave attenuation behavior of Al-substituted Co2W hexaferrites synthesized by sol–gel autocombustion process10.1016/j.cap.2012.02.038 ↗
7. Dielectric property of Aluminum-doped SiC powder by solid-state reaction10.1111/j.1551-2916.2009.03140.x ↗
8. High temperature dielectric loss of h-BN at X band and its dependence on the electron structure, defects and impurities10.1016/j.solidstatesciences.2010.07.006 ↗
9. Effects of sintering temperatures on the infrared emissivity of La0.7Sr0.3MnO310.1016/j.apsusc.2012.03.160 ↗
10. Phase evolution, phase transition, and microwave dielectric properties of scheelite structured xBi(Fe1/3Mo2/3)O4–(1−x)BiVO4 (0.0≤x≤1.0) low temperature firing ceramics10.1039/c2jm34603f ↗
11. Experimental and thermodynamic study of the hydrothermal oxidation behavior of Ti3SiC2 powders10.1016/j.scriptamat.2008.06.005 ↗
12. Microstructure and mechanical properties of in situ synthesized (TiB2+TiC)/Ti3SiC2 composites10.1016/j.ceramint.2011.06.066 ↗
13. Nucleation and growth of diamond on titanium silicon carbide by microwave plasma-enhanced chemical vapor deposition10.1016/j.jcrysgro.2006.06.040 ↗
14. Phase reactions associated with the formation of Ti3SiC2 from TiC/Si powders10.1016/j.ceramint.2011.04.132 ↗
15. Fabrication of high-purity Ti3SiC2 ternary carbide by spark plasma sintering technique10.1016/j.matlet.2005.01.019 ↗
16. Fabrication of high-Purity Ti3SiC2 powders by an in-situ reaction of polycarbosilane and metal titanium10.1111/j.1551-2916.2010.03672.x ↗
17. Synthesis of single-phase Ti3SiC2 powder10.1016/S0955-2219(03)00096-7 ↗
18. Effect of Al addition on low-temperature synthesis of Ti3SiC2 powder10.1016/j.jallcom.2007.07.090 ↗
19. Mechanical-alloying-assisted synthesis of Ti3SiC2 powder10.1111/j.1151-2916.2002.tb00210.x ↗
20. Synthesis of Ti3SiC2 in air using mechanically activated 3Ti/Si/2C powder10.1016/j.jallcom.2008.06.147 ↗
21. Synthesis and reaction mechanism of Ti3SiC2 ternary compound by carbothermal reduction of TiO2 and SiO2 powder mixtures10.1016/j.ceramint.2012.05.020 ↗
22. Fabrication and microstructure characterization of Ti3SiC2 synthesized from Ti/Si/2TiC powders using the pulse discharge sintering (PDS) technique10.1111/j.1151-2916.2003.tb03317.x ↗
23. Effect of liquid reaction on the synthesis of Ti3SiC2 powder10.1016/j.ceramint.2006.08.010 ↗
24. Solid-state synthesis and characterization of the ternary phase Ti3SiC210.1007/BF00352037 ↗
25. Preparation and characterization of aluminum-doped silicon carbide by combustion synthesis10.1111/j.1551-2916.2008.02526.x ↗
26. Electronic structure and bonding properties in layered ternary carbide Ti3SiC210.1088/0953-8984/12/28/102 ↗
27. Synthesis and characterization of Ti3AlC210.1111/j.1151-2916.2000.tb01281.x ↗
28. Modeling of the electronic structure, chemical bonding, and properties of ternary silicon carbide Ti3SiC210.1134/S0022476611040226 ↗