Effect of annealing on the structural and optical properties of β-Ga2O3 films prepared on gadolinium gallium garnet (110) by MOCVD
Source abstract
Abstract
Abstract Ga 2 O 3 films were deposited on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , or GGG)(110) substrates by the metalorganic chemical vapor deposition (MOCVD) method, followed by a post-deposition thermal annealing at different temperatures. The structural analyses showed that the film annealed at 900 ℃ was pure β -Ga 2 O 3 have the best crystalline quality. A clear epitaxial relationship of β -Ga 2 O 3 (100)‖GGG(110) with β -Ga 2 O 3 [010]‖GGG[00 1 ¯ ] was determined and a schematic diagram was proposed to clarify the growth mechanism for the 900 ℃-annealed sample. The average transmittance of the sample annealed at 900 ℃ was 84% in the visible wavelength region. A broad ultraviolet-green photoluminescence (PL) band ranged from 330 to 520 nm was observed, for which the PL mechanism was discussed and clarified.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
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References (20)
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