Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices
Source abstract
Abstract
Abstract Ce-doping NiFe2O4 spinel ferrite thin films were prepared on Pt / Ti / SiO2 / Si substrates using a chemical solution deposition method. It has been observed that Ce-doping induced enhancement of unipolar resistive switching properties, such as uniform switching voltages, enlarged ON / OFF ratio, and long retention in Pt / NiFe2O4 / Pt memory devices. The dominant conduction mechanisms in the thin film devices were Ohmic conduction at low resistance state and lower voltage region of high resistance state, while Schottky emission dominated at higher voltage region in high resistance state. The physical mechanism of resistive switching is related to the formation and rupture of conducting filament. The improved stability of the switching parameters for the devices can be attributed to Ce-doping minimizing random formation and rupture of conductive filament. This study indicates that doping rare earth ions in ferrite thin films would be an effective approach for obtaining stable resistance switching memory devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges10.1002/adma.200900375 ↗
2. Transition metal oxide thin films for nonvolatile resistive random access memory applications10.2109/jcersj2.117.929 ↗
3. Resistive switching in transition metal oxides10.1016/S1369-7021(08)70119-6 ↗
4. Complementary resistive switches for passive nanocrossbar memories10.1038/nmat2748 ↗
5. Recent progress in resistive random access memories: materials, switching mechanisms, and performance10.1016/j.mser.2014.06.002 ↗
6. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
7. Evidences of oxygen-mediated resistive-switching mechanism in TiN/HfO2/Pt cells10.1063/1.3527086 ↗
8. Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices10.1063/1.3055414 ↗
9. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO310.1038/nmat1614 ↗
10. Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
11. Resistance switching behaviors of V-doped La0.67Ca0.33MnO3 thinfilms on F-doped SnO2 conducting glass10.1063/1.3110034 ↗
12. Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches10.1088/0957-4484/21/42/425202 ↗
13. Ionic doping effect in ZrO2 resistive switching memory10.1063/1.3364130 ↗
14. Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach10.1063/1.3543837 ↗
15. Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films10.1088/0022-3727/44/41/415104 ↗
16. Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application10.1063/1.4860950 ↗
17. Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films10.1063/1.3700728 ↗
18. Multifunctional Eu3+-doped Bi12TiO20 thin films: resistive switching, dielectric, and photoluminescent properties10.1016/j.ceramint.2015.03.135 ↗
19. NiFe2O4: a versatile spinel material brings new opportunities for spintronics10.1002/adma.200500972 ↗
20. Influence of Ce4+ ions on the structural and magnetic properties of NiFe2O410.1063/1.3603004 ↗
21. Structural, optical and magnetic studies of Ce doped NiFe2O4 nanoparticles
22. Resistive switching in reactive cosputtered MFe2O4 (M = Co, Ni) films10.1016/j.apsusc.2012.09.135 ↗
23. Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances10.1021/ja305681n ↗
24. Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices10.1063/1.4744950 ↗
25. Resistive switching properties and physical mechanism of cobalt ferrite thin films10.1063/1.4870627 ↗
26. High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure10.1063/1.4707373 ↗
27. Study of resistive switching and magnetism modulation in the Pt/CoFe2O4/Nb: SrTiO3 heterostructures10.1063/1.4928337 ↗
28. Influence of oxygen vacancies on the electronic structure and magnetic properties of NiFe2O4 thin films10.1063/1.4704690 ↗
29. Ce 3d XPS study of composite CexMn1−xO2−y wet oxidation catalysts10.1016/S0169-4332(02)00559-7 ↗
30. Localized metallic conductivity and self-healing during thermal reduction of SrTiO310.1103/PhysRevLett.88.075508 ↗
31. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method10.1021/am500048y ↗
32. Resistive switching and magnetic modulation in cobalt doped ZnO10.1002/adma.201201595 ↗
33. Resistive switching characteristics of nickel silicide layer embedded HfO2 film10.1063/1.3694045 ↗
34. Nonvolatile memristive switching characteristics of TiO2 films embedded with nickel nanocrystals10.1109/TNANO.2011.2132142 ↗
35. Growth, dielectric properties, and memory device applications of ZrO2 thin films10.1016/j.tsf.2013.01.004 ↗
36. One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications10.1007/s10853-013-7541-0 ↗
37. Temperature induced complementary switching in titanium oxide resistive random access memory10.1063/1.4959799 ↗
38. Electric field manipulation of nonvolatile magnetization in Au/NiO/Pt heterostructure with resistive switching effect10.1063/1.4891482 ↗
39. Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors10.1021/nn100323x ↗
40. Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory10.1002/adma.200602915 ↗
41. High-performance programmable memory devices based on Co-doped BaTiO310.1002/adma.201004306 ↗
42. Impacts of Co doping on ZnO transparent switching memory device characteristics10.1063/1.4948598 ↗
43. Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe1−xCrxO3 thin films10.1063/1.4967993 ↗