Dielectric properties of CaCu3Ti4O12 improved by chromium/lanthanum co-doping

Abstract The dielectric properties of Cr + La co-doped CaCu 3 Ti 4 O 12 ceramics prepared by a solid-state reaction method were evaluated and compared to Cr-doped, La-doped, and parent CaCu 3 Ti 4 O 12 (CCTO). Their structure and grain size were evaluated by X-ray diffraction and scanning electron microscopy, respectively. No secondary phase was detected based on the XRD analysis. The results show that, the room temperature dielectric loss of the co-doped samples is reduced to 43% compared to CCTO and their dielectric permittivity is higher than the un-doped, Cr-doped, and La-doped samples at frequencies over 325 kHz, 30 kHz, and 12 Hz, respectively. Furthermore, the temperature stability of the co-doped sample is significantly more convenient than that of CCTO, and its dielectric loss is three times lower. The results also indicated that the co-doping method is effective in reducing the dielectric loss, still maintaining the high dielectric permittivity.