Low temperature preparation of CaCu 3 Ti 4 O 12 ceramics with high permittivity and low dielectric loss

Abstract Low temperature preparation of CaCu 3 Ti 4 O 12 ceramics with large permittivity is of practical interest for cofired multilayer ceramic capacitors. Although CaCu 3 Ti 4 O 12 ceramics have been prepared at low temperatures as previously reported, they have rather low permittivity. This work demonstrates that CaCu 3 Ti 4 O 12 ceramics can not only be prepared at low temperatures, but they also have large permittivity. Herein, CaCu 3 Ti 4 O 12 ceramics were prepared by the solid state reaction method using B 2 O 3 as the doping substance. It has been shown that B 2 O 3 dopant can considerably lower the calcination and sintering temperatures to 870 °C and 920 °C, respectively. The relative permittivity of the low temperature prepared CaCu 3 Ti 4−x B x O 12 ceramics is about 5 times larger than the previously reported results in the literature. Furthermore, the dielectric loss of the CaCu 3 Ti 4−x B x O 12 ceramics is found to be as low as 0.03. This work provides a beneficial base for the future commercial applications of CaCu 3 Ti 4 O 12 ceramics with large permittivity for the cofired multilayer ceramic capacitors.