Effect of hot dip silicon-plating temperature on microstructure characteristics of silicide coating on tungsten substrate
Source abstract
Abstract
Abstract W-silicide coatings were deposited on tungsten substrate by using hot dip silicon-plating method under various temperatures. The phase composition, microstructure, and concentration distribution of elements were investigated. The results show that the W-silicide coatings consist of WSi2 layer and interface layer (W5Si3 layer), and the WSi2 coatings have a strong preferred orientation on the (211) and (206) crystal faces. The hot dip temperature has a significant effect on thicknesses and grain sizes of coatings. With the increase of hot dip temperature, the thicknesses of WSi2 layer and W5Si3 layer, and grain sizes increase obviously. Moreover, a high silicon concentration is observed at coating surface when the temperature is 1560 °C, and the highest silicon concentration is about 46 wt% (84.79 at.%).
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Intermetallics and Advanced Alloy Properties · Semiconductor materials and interfaces · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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