Enhanced dielectric properties of Ag-doped CCTO ceramics for energy storage devices

Abstract Ag-doped CaCu 3 Ti 4 O 12 powders were subjected to high-energy milling to produce nano-sized particles, and the resulting ceramics were analyzed in terms of the dielectric properties and sintering temperature. Ag dopant was added to CaCu 3 Ti 4 O 12 powders to reduce the sintering temperature, and the Ag-doped CaCu 3 Ti 4 O 12 ceramics were sintered at temperatures from 975 to 1125 °C to determine the optimum sintering temperature according to the various dopant ratios. The relative dielectric permittivity at a frequency of 1 kHz of the 2 mol% Ag-doped CaCu 3 Ti 4 O 12 ceramics was higher than that of undoped CaCu 3 Ti 4 O 12 ceramics. The addition of Ag to the CaCu 3 Ti 4 O 12 ceramics was observed to lower the sintering temperature from 1125 to 1075 °C. Moreover, the 2 mol% Ag-doped CaCu 3 Ti 4 O 12 ceramics prepared from nano-size particles exhibited an improved relative dielectric permittivity. These results suggest that Ag-doping and reducing the particle size of the CaCu 3 Ti 4 O 12 ceramics decreases their sintering temperature and improves their dielectric properties.