Electrical properties and energy-storage performance of (Pb 0.92 Ba 0.05 La 0.02 )(Zr 0.68 Sn 0.27 Ti 0.05 )O 3 antiferroelectric thick films prepared by tape-casing method
Source abstract
Abstract
Abstract The energy-storage performance and dielectric properties of tape-cast (Pb 0.92 Ba 0.05 La 0.02 )(Zr 0.68 Sn 0.27 Ti 0.05 )O 3 (PBLZST) antiferroelectric (AFE) thick films with different thicknesses were systematically studied. As the thickness of the thick films increased from 40 to 80 µm, the dielectric constant and saturation polarization ( P s ) of the thick films were gradually increased, while their corresponding breakdown strength (BDS) was decreased. A maximum recoverable energy-storage density of 6.8 J/cm 3 , companied by an efficiency of 61.2%, was achieved in the PBLZST AFE thick film with a thickness of 40 µm at room temperature. Moreover, the energy density of the PBLZST AFE thick films also displayed good thermal stability over 25–200 °C. In addition, all the samples had a low leakage current density of ~10 −6 A/cm 2 at room temperature. These findings demonstrated that the PBLZST thick films should be a promising candidate for applications in high energy-storage capacitors.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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