Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD
Source abstract
Abstract
Abstract Gallium oxide (Ga2O3) films have been deposited on SrTiO3 (100) substrates by using the metal-organic chemical vapor deposition (MOCVD) method. Post-deposition annealing was performed at different temperatures. XRD θ-2θ scans displayed that the annealing at 1000 °C leaded to β phase Ga2O3 film with the best crystalline quality. Microstructural and chemical composition analyses revealed that this film was single crystal β-Ga2O3 with stoichiometric ratio. The epitaxial relationships were clearly determined as β-Ga2O3 (100) || SrTiO3 (100) with β-Ga2O3 [001] || SrTiO3 . All of the prepared Ga2O3 samples have average transmittances in the visible range of more than 70%.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
2. Free growth of one-dimensional β-Ga2O3 nanostructures including nanowires, nanobelts and nanosheets using a thermal evaporation method10.1016/j.ceramint.2016.04.165 ↗
3. The electronic structure of β-Ga2O310.1063/1.3521255 ↗
4. Influence of rapid thermal annealing at varied temperatures on conductivity activation energy and,structural properties of Si-doped β-Ga2O3 film grown by pulsed laser deposition10.1016/j.ceramint.2018.09.240 ↗
5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal beta-Ga2O3 (010) substrates10.1063/1.3674287 ↗
6. A review of the most recent progresses of state-of-art gallium oxide power devices
7. Review of gallium-oxide-based solar-blind ultraviolet photodetectors10.1364/PRJ.7.000381 ↗
8. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
9. See-through Ga2O3 solar-blind photodetectors for use in harsh environments
10. State-of-the-art technologies of gallium oxide power devices10.1088/1361-6463/aa7aff ↗
11. Current status of Ga2O3 power devices10.7567/JJAP.55.1202A1 ↗
12. Study on the optical properties of β-Ga2O3 films grown by MOCVD10.1007/s10854-017-6882-x ↗
13. Luminescence intensity and color purity enhancement in nanostructured β-Ga2O3 : Eu3+ phosphors10.1016/j.ssc.2004.08.023 ↗
14. Study of intense photoluminescence from monodispersed β-Ga2O3 ellipsoidal structures10.1016/j.ceramint.2018.11.203 ↗
15. Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications10.1016/S0927-0248(00)00196-3 ↗
16. Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology10.1364/OME.4.001067 ↗
17. Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
18. High breakdown voltage quasi-two-dimensional beta-Ga2O3 field-effect transistors with a boron nitride field plate10.1063/1.5018238 ↗
19. Recent progress in Ga2O3 power devices10.1088/0268-1242/31/3/034001 ↗
20. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material
21. Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering10.1016/j.vacuum.2017.09.033 ↗
22. Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers10.1016/j.spmi.2018.05.027 ↗
23. Influence of annealing time on microstructure of one-dimensional Ga2O3 nanorods10.1016/j.jallcom.2010.03.106 ↗
24. Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates10.1016/j.tsf.2012.02.027 ↗
25. X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films10.1016/S0169-4332(99)00601-7 ↗
26. Influence of annealing on the structure and stoichiometry of europium-doped titanium dioxide thin films10.1016/j.vacuum.2008.01.021 ↗