Room temperature preparation of high performance AZO films by MF sputtering
Source abstract
Abstract
Abstract Aluminum-doped zinc oxide (AZO) thin films have been deposited by MF magnetron sputtering from a ceramic oxide target without heating the substrates. This study has investigated effects of sputtering power on the structural, electrical and optical properties of the AZO films. The films delivered a hexagonal wurtzite structure with (002) preferential orientation and uniform surface morphology with 27–33 nm grain size. The results indicate that residual stress and grain size of the AZO films are dependent on sputtering power. The minimum resistivity of 7.56×10 −4 Ω cm combined with high transmittance of 83% were obtained at deposited power of 1600 W. The films delivered the advantages of a high deposition rate at low substrate temperature and should be suitable for the fabrication of low-cost transparent conductive oxide layer.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. Transparent conducting oxide semiconductors for transparent electrodes10.1088/0268-1242/20/4/004 ↗
2. Investigation of AlF3 doped ZnO thin films prepared by RF magnetron Sputtering10.1016/j.ceramint.2011.08.007 ↗
3. Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films10.1016/j.sse.2010.07.002 ↗
4. Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition10.1016/j.apsusc.2006.02.046 ↗
5. Al-doped ZnO thin films by sol–gel method10.1016/j.surfcoat.2003.10.112 ↗
6. DC reactive sputter deposition of ZnO: Al thin film on glass10.1016/S0254-0584(01)00451-5 ↗
7. Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread10.1016/j.ceramint.2011.05.107 ↗
8. The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes10.1016/j.tsf.2009.10.130 ↗
9. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices10.1063/1.1605805 ↗
10. Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications10.1016/j.solmat.2009.08.012 ↗
11. Structural and optical properties of sputtered ZnO thin films10.1016/j.apsusc.2007.10.105 ↗
12. The properties of aluminum-doped zinc oxide thin films prepared by rf-magnetron sputtering from nanopowder targets10.1016/j.msec.2007.10.006 ↗
13. Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy10.1063/1.1331089 ↗
14. Al‐doped zinc oxide films deposited by simultaneous RF and DC excitation of a magnetron plasma—relationships between plasma parameters and structural and electrical film properties10.1063/1.366798 ↗
15. Correlation between structure, stress and deposition parameters in direct current sputtered zinc oxide films10.1116/1.1517997 ↗
16. The structural properties of Al doped ZnO films depending on the thickness and their effect on the electrical properties10.1016/j.apsusc.2011.07.022 ↗
17. Highly conductive and transparent laser ablated nanostructured Al: ZnO thin films10.1016/j.apsusc.2010.07.044 ↗
18. Substrate dependent internal stress in sputtered zinc oxide thin films10.1063/1.350815 ↗
19. Effect of thickness on the structure and properties of ZnO thin films prepared by Pulsed Laser Deposition10.1143/JJAP.45.7860 ↗
20. Stress and structural studies of ZnO thin films on polymer substrate under different RF powered conditions10.1016/j.matlet.2009.08.027 ↗
21. Influence of buffer layer thickness on the structure and optical properties of ZnO thin films10.1016/j.apsusc.2005.04.041 ↗
22. Influence of negative ion resputtering on Al-doped ZnO thin films prepared by mid-frequency magnetron sputtering10.1016/j.apsusc.2009.09.096 ↗
23. Sputtering—a review of some recent experimental and theoretical aspects
24. Studies on electron transport properties and the Burstein–Moss shift in indium-doped ZnO films10.1016/0040-6090(91)90067-8 ↗
25. Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films10.1016/j.tsf.2010.03.087 ↗
26. Transparent conductive Al and Mn doped ZnO thin films prepared by DC reactive magnetron sputtering10.1016/j.surfcoat.2003.09.046 ↗
27. Effects of pre-strain applied at a polyethylene terephthalate substrate before the coating of Al-doped ZnO film on film quality and optical and electrical properties10.1016/j.ceramint.2011.03.042 ↗
28. Biaxial strain dependence of exciton resonance energies in wurtzite GaN10.1063/1.364074 ↗
29. Epitaxial growth of ZnO films10.1016/j.pcrysgrow.2005.01.003 ↗
30. The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes10.1016/j.tsf.2009.10.130 ↗
31. High deposition rate aluminium-doped zinc oxide films with highly efficient light trapping for silicon thinfilm solar cells10.1016/j.tsf.2007.06.006 ↗
32. Effects of rf power on surface-morphological, structural and electrical properties of aluminium-doped zinc oxide films by magnetron sputtering10.1016/j.apsusc.2007.12.061 ↗
33. ZnO: Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells10.1016/j.tsf.2008.05.009 ↗