Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant
Source abstract
Abstract
Abstract Atomic layer deposition (ALD) of In 2 O 3 films was investigated using a novel liquid precursor, [3-(dimethylamino)propyl] dimethyl indium (DADI). Typical ALD growth was observed at a substrate temperature of 275 °C, with relatively high growth rates of 0.6 A/cycle. The In 2 O 3 layer exhibits low resistivity (9.2×10 −5 Ω cm) with relatively high optical transparency (>80% between 420 and 700 nm). The carrier concentration is approximately one or two orders of magnitude higher than those reported in the literature. The origin of such electrical properties is investigated with respect to the microstructure and chemical properties of the In 2 O 3 film.
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Research context
OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Thin-Film Transistor Technologies
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