Numerical investigation on the influence of cutting-edge radius and grinding wheel speed on chip formation in SiC grinding
Source abstract
Abstract
Abstract A finite element model (FEM) of single-grain surface grinding of SiC has been established to understand the effects of the cutting-edge radius and grinding wheel speed on SiC chip formation. Based on the mechanic deformation behavior of SiC, the critical chip formation thickness and critical ductile-brittle transition thickness were found. Results obtained show that critical ductile-brittle transition thickness has a peak value at R c = 1.25 µm and v s = 80 m/s respectively. Normal grinding force increased firstly with the increasing cutting edge radius and then declined. The critical cutting edge radius R c = 1.25 µm and grinding wheel speed v s = 80 m/s were determined depending on the variation of critical chip formation thickness, critical ductile-brittle transition thickness, grinding force, ground surface quality. Finally, the simulation results were verified experimentally by an indirect single diamond grain scratching SiC ceramics test.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Tunneling and Rock Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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