Stacking faults in silicon carbide whiskers
Source abstract
Abstract
Abstract Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor–solid (VS), two-stage growth (TS) and vapor–liquid–solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e. the small diameter whiskers ( 2 μm) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers were probably due to the high specific lateral surface area of small diameter whiskers. ©
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis · Semiconductor materials and devices
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References (19)
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