Synthesis of SiC nanowires by thermal evaporation method without catalyst assistant
Source abstract
Abstract
Abstract In this paper, SiC nanowires were successfully synthesized on Si substrate by the thermal evaporation method without the assistance of a metal catalyst. The phase composition, morphology and microstructure of the SiC–SiO 2 core–shell nanowires were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). The SiC nanowires produced grew along the [111] direction and had diameters of 50–100 nm with lengths of several hundreds of microns. The SiC nanowire was composed of a single-crystalline SiC core with a thin amorphous SiO 2 shell. The growth mechanism of the nanowires can be explained by the vapor–solid (VS) process.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · ZnO doping and properties · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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