Chemically synthesized Ag-doped SnS films for PV applications
Source abstract
Abstract
Abstract The present paper reports chemically synthesized silver (Ag)-doped SnS absorbers (0–15 at%) with tunable opto-electrical properties. The deposide films exhibited a polycrystalline nature and the crystallinity was improved with Ag-doping concentration upto 9 at%. The optical band gap of the films was varied in the range, 1.31–1.26 eV. The electrical resistivity of the films decreased significantly and the carrier concentration was improved by the Ag-doping concentration. Therefore, the SnS films grown with a 9 at% Ag-doping concentration exhibited a very low electrical resistivity of 6 Ω-cm and a carrier concentration of 1.2×1016 cm−3 with an optical energy band gap of 1.26 eV due to the interstitial inclusion of Ag-atoms, which are suitable for the fabrication of eco-friendly, low cost, reliable, and highly efficient thin film solar cells.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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