The effect of aluminium oxide on the residual voltage of ZnO varistors
Source abstract
Abstract
Abstract The role of aluminium oxide is investigated in an attempt to obtain low residual voltage ZnO varistors fabricated in the traditional way. The samples were sintered at three different temperatures: 1150, 1200, and 1250 °C for three different times: 1, 2, and 3 h. The effect of aluminium additions, in the range of 500–10,000 ppm, on the characteristics of electric field–current density was investigated. Addition of Al2O3 shifts the upturn region to higher current density due to the increase of the conductivity of the ZnO grains up to an optimal value. After 1000 ppm, the beneficial effect on the onset of upturn voltage is no more efficient. This work highlighted the ambivalent role of aluminium (donor or acceptor) and the need for tuning both an optimal concentration and sintering time to obtain the greatest conductivity. Our results suggest that Al3+ substitutes first to Zn2+ sites in the ZnO wurtzite structure and then, when thermodynamic saturation is reached, interstitial sites.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
1. Non-ohmic properties of zinc oxide ceramics10.1143/JJAP.10.736 ↗
2. Zinc oxide varistors—a review
3. Grain boundary segregation in a commercial ZnO-based varistor10.1063/1.325881 ↗
4. Application of zinc oxide varistors10.1111/j.1151-2916.1990.tb05232.x ↗
5. Effects of dopants on the characteristics of ZnO varistors
6. Microstructure engineering through donor and acceptor doping in the grain and grain boundary of a polycrystalline semiconducting ceramic10.1557/JMR.1992.3280 ↗
7. Improved varistor nonlinearity via donor impurity doping10.1063/1.331463 ↗
8. Effect of bismuth sesquioxide on the characteristics of ZnO varistors10.1111/j.1151-2916.1986.tb04774.x ↗
9. Microstructure and phase transformation in a highly non-ohmic metal oxide varistor ceramic
10. Effect of dopants’ distribution on the non-linear properties of a ZnO-based non-linear resistor
11. Conduction mechanism of non-ohmic zinc oxide ceramics10.1063/1.325139 ↗
12. The microstructure of the ZnO varistor10.1007/BF00552403 ↗
13. Zinc oxide varistors10.1109/57.44606 ↗
14. Crystal phases of nonohmic zinc oxide ceramics10.1143/JJAP.17.1 ↗
15. Resistivity anomaly in doped barium titanate10.1111/j.1151-2916.1964.tb13795.x ↗
16. Effects of antimony oxide on the characteristics of ZnO varistors10.1111/j.1151-2916.1987.tb04974.x ↗
17. Intrinsic defects in ZnO varistors10.1063/1.332607 ↗
18. Bulk electron traps in zinc oxide varistors10.1063/1.337504 ↗
19. The physics of metal oxide varistors10.1063/1.321701 ↗