ZnO and ZnO1−x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior
Source abstract
Abstract
In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies and thickness on the memristive characteristics were investigated. The oxygen deficiency of the ZnO1-x structure was confirmed by SIMS analyses. The memristive characteristics of both the ZnO and ZnO1-x devices were determined by time dependent current-voltage (I-V-t) measurements. The distinctive pinched hysteresis I-V loops of memristors were observed in all the fabricated devices. The typical homogeneous interface and filamentary types of memristive behaviors were compared. In addition, conduction mechanisms, on/off ratios and the compliance current were analyzed. The 30 nm ZnO based devices with native oxygen vacancies showed the best on/off ratio. All of the devices exhibited dominant Schottky emissions and weaker Poole-Frenkel conduction mechanisms. Results suggested that the oxygen deficiency was responsible for the Schottky emission mechanism. Moreover, the compliance currents of the devices were related to the decreasing power consumption as the oxygen vacancies increased.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
Show source-provided references
1. Memristor-The missing circuit element10.1109/TCT.1971.1083337 ↗
2. The missing memristor found10.1038/nature06932 ↗
3. H.K.H. Kim, M.P. Sah, C.Y.C. Yang, L.O. Chua, Memristor-based multilevel memory, Cell. Nanoscale Networks Their Appl. (CNNA), 2010 12th Int. Work. 1, 2010, pp. 1–6. doi:10.1109/CNNA.2010.5430320.10.1109/CNNA.2010.5430320 ↗
4. B. Linares-Barranco, T. Serrano-Gotarredona, Exploiting Memristance in Adaptive Asynchronous Spiking Neuromorphic Nanotechnology Systems, Nanotechnol. (IEEE-NANO), 2009, in: Proceedings of the 9th IEEE Conference 6, 2009, pp. 601–604. 〈http://ieeexplore.ieee.org/xpls/abs_all.jsp?Arnumber=5394758〉 (Accessed 3 December 2013).
5. T. Raja, S. Mourad, Digital logic implementation in memristor-based crossbars a tutorial, in: Proc. - 5th IEEE Int. Symp. Electron. Des. Test Appl. DELTA 2010, 2010, pp. 303–309. doi:10.1109/DELTA.2010.70.10.1109/DELTA.2010.70 ↗
6. Memristors: devices, models, and applications10.1109/JPROC.2012.2190812 ↗
7. Two centuries of memristors10.1038/nmat3338 ↗
8. Three fingerprints of memristor10.1109/TCSI.2013.2256171 ↗
9. Resistive switching in transition metal oxides10.1016/S1369-7021(08)70119-6 ↗
10. Resistance switching memories are memristors10.1007/s00339-011-6264-9 ↗
11. Memristive switching mechanism for metal/oxide/metal nanodevices10.1038/nnano.2008.160 ↗
12. The mechanism of electroforming of metal oxide memristive switches10.1088/0957-4484/20/21/215201 ↗
13. Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior10.1002/smll.200801323 ↗
14. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
15. Conduction mechanism of valence change resistive switching memory: a survey10.3390/electronics4030586 ↗
16. Resistive switching phenomena in thin films: materials, devices, and applications10.1557/mrs.2012.2 ↗
17. The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique10.1016/j.jallcom.2016.08.295 ↗
18. Status and prospects of ZnO-based resistive switching memory devices10.1186/s11671-016-1570-y ↗
19. Zinc Oxide: fundamentals
20. Recent progress in processing and properties of ZnO10.1016/S0749-6036(03)00093-4 ↗
21. Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor10.1016/j.spmi.2016.11.043 ↗
22. The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory10.1063/1.4976512 ↗
23. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory10.1038/srep07764 ↗
24. Amorphous ZnO based resistive random access memory10.1039/C5RA22728C ↗
25. Investigation of process parameter variation in the memristor based resistive random access memory (RRAM): effect of device size variations10.1016/j.mssp.2015.03.015 ↗
26. Simplified theory of space-charge-limited currents in an insulator with traps10.1103/PhysRev.103.1648 ↗
27. Schottky emission through thin insulating films10.1103/PhysRevLett.8.267 ↗
28. The Poole-Frenkel effect with compensation present10.1063/1.1656022 ↗
29. Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate10.1021/am4007287 ↗
30. Influence of oxygen vacancies on Schottky contacts to ZnO10.1063/1.2894568 ↗
31. The mechanism of electroforming of metal oxide memristive switches10.1088/0957-4484/20/21/215201 ↗