Microstructure and electrical properties of Sc2O3-doped ZnO–Bi2O3-based varistor ceramics
Source abstract
Abstract
Abstract The microstructure and electrical properties of ZnO–Bi 2 O 3 -based varistor ceramics doped with different Sc 2 O 3 content sintered at 1100 °C were investigated. The results showed that the nonlinear coefficient of the varistor ceramics with Sc 2 O 3 were in the range of 18–54, the threshold voltage in the range of 250–332 V/mm, the leakage current in the range of 0.1–23.0 μA, with addition of 0–1.00 mol% Sc 2 O 3 . The ZnO–Bi 2 O 3 -based varistor ceramics doped with Sc 2 O 3 content of 0.12 mol% exhibited the highest nonlinearity, in which the nonlinear coefficient is 54, the threshold voltage and the leakage current is 278 V/mm and 2.9 μA, respectively. The results confirmed that doping with Sc 2 O 3 was a very promising route for the production of the higher nonlinear coefficient of ZnO–Bi 2 O 3 -based varistor ceramics, and determining the proper amounts of addition of Sc 2 O 3 was of great importance.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Varistor ceramics10.1111/j.1151-2916.1999.tb01793.x ↗
2. A strategic two-stage low-temperature thermal processing leading to fully dense and fine-grained doped-ZnO varistors10.1002/1521-4095(20020116)14:2<137::AID-ADMA137>3.0.CO;2-7 ↗
3. Effect of sintering temperature on varistor properties and aging characteristics of ZnO–V2O5–MnO2 ceramics10.1016/j.ceramint.2009.03.011 ↗
4. Microstructural and compositional aspects of ZnO-based varistor ceramics prepared by direct mixing of the constituent phases and high-energy milling10.1016/j.ceramint.2007.04.003 ↗
5. Rare earth oxides effects on both the threshold voltage and energy absorption capability of ZnO varistors10.1016/j.ceramint.2006.04.004 ↗
6. Microstructural and electrical characteristics of Y2O3-doped ZnO–Bi2O3-based varistor ceramics10.1016/S0955-2219(01)00134-0 ↗
7. Effect of sintering temperature on nonlinear electrical properties and stability against DC accelerated aging stress of (CoO, Cr2O3 La2O3)-doped ZnO–Pr6O11-based varistors10.1016/j.matlet.2006.05.079 ↗
8. Microstructure and electrical properties of Er2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling10.1016/S1002-0721(07)60057-X ↗
9. Effect of Er2O3 addition on the microstructure, electrical properties, and stability of Pr6O11-based ZnO ceramic varistors10.1023/A:1017552020433 ↗
10. ZnO varistors with high voltage gradient and low leakage current by doping rare-earth oxide10.1007/s11431-008-0085-x ↗
11. Effect of SiO2 addition on the microstructure and electrical properties of ZnO-based varistors10.1007/s12613-010-0115-0 ↗
12. Microstructure and electrical properties of La2O3-doped ZnO–Bi2O3-based varistor ceramics10.4028/www.scientific.net/AMR.79-82.2007 ↗
13. Microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics by different sintering processes10.1016/j.jeurceramsoc.2008.10.020 ↗
14. Microstructure and electrical properties of Y2O3-doped ZnO–Bi2O3-based varistor ceramics
15. Characteristics of ZnO-based varistor ceramics doped with Al2O310.1016/j.jeurceramsoc.2007.02.176 ↗
16. The characteristics of ZnO–Bi2O3-based varistor ceramics doped with Y2O3 and varying amounts of Sb2O310.1016/S0955-2219(03)00412-6 ↗
17. The effect of sintering temperature variations on the development of electrically active interfaces in zinc oxide based varistors10.1016/S0955-2219(00)00223-5 ↗
18. Varistors based in the ZnO–Bi2O3 system: microstructure control and properties10.1016/j.jeurceramsoc.2007.02.046 ↗
19. Sintering process as a relevant parameter for Bi2O3 vaporization from ZnO–Bi2O3-based varistor ceramics10.1016/S1003-6326(09)60064-9 ↗
20. Effect of cooling rate on degradation characteristics of ZnO·Pr6O11·CoO·Cr2O3·Y2O3-based varistors10.1016/j.ssc.2004.07.040 ↗
21. Effect of MnO2 addition on microstructure and electrical properties of ZnO–V2O5-based varistor ceramics10.1016/j.ceramint.2008.01.010 ↗
22. Nonohmic properties of zinc oxide ceramics10.1143/JJAP.10.736 ↗
23. Microstructure and electrical properties of Tb-doped zinc oxide-based ceramics10.1016/j.jnoncrysol.2007.06.041 ↗
24. Microstructure and electrical properties Y2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling10.1016/S1005-8850(07)60051-6 ↗
25. Varistor properties of Sc2O3-doped Sn·Co·Nb ceramics10.1016/j.ceramint.2004.05.018 ↗
26. Effect of fabrication conditions on I–V properties for ZnO varistor with high concentration additives by sol-gel technique10.1016/j.cap.2004.03.004 ↗
27. Electrical and microstructural characteristics of ZnO–Bi2O3-based varistors doped with rare-earth oxides10.1557/JMR.2001.0388 ↗
28. Microstructure, electrical properties, and degradation behavior of praseodymium oxides-based zinc oxide varistors doped with Y2O310.1023/A:1004749214640 ↗